Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions

P. Khalili Amiri, Z. M. Zeng, J. Langer, H. Zhao, G. Rowlands, Y. J. Chen, I. N. Krivorotov, J. P. Wang, H. W. Jiang, J. A. Katine, Y. Huai, K. Galatsis, K. L. Wang

Research output: Contribution to journalArticlepeer-review

148 Citations (Scopus)

Abstract

We present in-plane CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current. The tunneling magnetoresistance ratio, resistance-area product, and switching current densities are compared in magnetic tunnel junctions with different CoFeB compositions. The effects of CoFeB free layer thickness on its magnetic anisotropy and current-induced switching characteristics are studied by vibrating sample magnetometry and electrical transport measurements on patterned elliptical nanopillar devices. Switching current densities ∼4 MA/ cm2 are obtained at 10 ns write times.

Original languageEnglish
Article number112507
JournalApplied Physics Letters
Volume98
Issue number11
DOIs
Publication statusPublished - 2011 Mar 14

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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