Switching transient analysis of a metal/ferroelectric/semiconductor switch diode with high speed response to infrared light

F. Y. Chen, Jyh Jier Ho, Y. K. Fang, C. Y. Shu, Chin Yuan Hsu, Jiann Ruey Chen, M. S. Ju

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A thin PbTiO3-n-p+ silicon switch diode has been developed, in which the switching voltage (the turned-on voltage) changes in proportion to the infrared light power. The diode has a rapid response time of 0.65 μs compared with other conventional infrared sensors. It is attributed to the rapid switching device structure and the smaller pyroelectric layer thickness, 50 nm. In this paper, we have analyzed the rapid switching transient response by using heat conduction and switching theory successfully. The experimental results are in agreement with the theoretical analysis.

Original languageEnglish
Pages (from-to)502-510
Number of pages9
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume46
Issue number3
DOIs
Publication statusPublished - 1999

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

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