Symmetrical dipole contribution from planar defects on m-plane ZnO epitaxial films

Chung Wei Liu; Shoou Jinn Chang; Yen Teng Ho; Li Chang; Kuang Yao Lo; Sanjaya Brahma

doi:10.2174/1573413710666140526233427

Symmetrical dipole contribution from planar defects on m-plane ZnO epitaxial films

Chung Wei Liu, Shoou Jinn Chang, Yen Teng Ho, Li Chang, Kuang Yao Lo, Sanjaya Brahma

Research output: Contribution to journal › Article › peer-review

Abstract

The planar defects such as basal stacking faults (BSFs) are probed on m-plane ZnO grown on LaAlO3(112) substrate by reflective second harmonic generation (RSHG). The BSFs result in nonvanishing single-direction dipoles that behave similar to a mirror-like symmetrical dipole. The RSHG pattern from m-plane ZnO comprised of not only the bulk dipole contribution of ZnO but also an additional mirror-like symmetrical dipole contribution from BSF defects. Transmission electron microscopy image displays the presence of BSFs that lie in the c-plane of ZnO and agrees well with RSHG results. Planar BSFs are formed due to the anisotropic stress relaxation between m-plane ZnO film and LaAlO3(112) substrate, resulting in higher-quality m-plane ZnO films.

Original language	English
Pages (from-to)	883-888
Number of pages	6
Journal	Current Nanoscience
Volume	10
Issue number	6
DOIs	https://doi.org/10.2174/1573413710666140526233427
Publication status	Published - 2014 Jan 1

All Science Journal Classification (ASJC) codes

Biotechnology
Bioengineering
Medicine (miscellaneous)
Biomedical Engineering
Pharmaceutical Science

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Cite this

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title = "Symmetrical dipole contribution from planar defects on m-plane ZnO epitaxial films",

abstract = "The planar defects such as basal stacking faults (BSFs) are probed on m-plane ZnO grown on LaAlO3(112) substrate by reflective second harmonic generation (RSHG). The BSFs result in nonvanishing single-direction dipoles that behave similar to a mirror-like symmetrical dipole. The RSHG pattern from m-plane ZnO comprised of not only the bulk dipole contribution of ZnO but also an additional mirror-like symmetrical dipole contribution from BSF defects. Transmission electron microscopy image displays the presence of BSFs that lie in the c-plane of ZnO and agrees well with RSHG results. Planar BSFs are formed due to the anisotropic stress relaxation between m-plane ZnO film and LaAlO3(112) substrate, resulting in higher-quality m-plane ZnO films.",

author = "Liu, {Chung Wei} and Chang, {Shoou Jinn} and Ho, {Yen Teng} and Li Chang and Lo, {Kuang Yao} and Sanjaya Brahma",

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T1 - Symmetrical dipole contribution from planar defects on m-plane ZnO epitaxial films

AU - Liu, Chung Wei

AU - Chang, Shoou Jinn

AU - Ho, Yen Teng

AU - Chang, Li

AU - Lo, Kuang Yao

AU - Brahma, Sanjaya

PY - 2014/1/1

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N2 - The planar defects such as basal stacking faults (BSFs) are probed on m-plane ZnO grown on LaAlO3(112) substrate by reflective second harmonic generation (RSHG). The BSFs result in nonvanishing single-direction dipoles that behave similar to a mirror-like symmetrical dipole. The RSHG pattern from m-plane ZnO comprised of not only the bulk dipole contribution of ZnO but also an additional mirror-like symmetrical dipole contribution from BSF defects. Transmission electron microscopy image displays the presence of BSFs that lie in the c-plane of ZnO and agrees well with RSHG results. Planar BSFs are formed due to the anisotropic stress relaxation between m-plane ZnO film and LaAlO3(112) substrate, resulting in higher-quality m-plane ZnO films.

AB - The planar defects such as basal stacking faults (BSFs) are probed on m-plane ZnO grown on LaAlO3(112) substrate by reflective second harmonic generation (RSHG). The BSFs result in nonvanishing single-direction dipoles that behave similar to a mirror-like symmetrical dipole. The RSHG pattern from m-plane ZnO comprised of not only the bulk dipole contribution of ZnO but also an additional mirror-like symmetrical dipole contribution from BSF defects. Transmission electron microscopy image displays the presence of BSFs that lie in the c-plane of ZnO and agrees well with RSHG results. Planar BSFs are formed due to the anisotropic stress relaxation between m-plane ZnO film and LaAlO3(112) substrate, resulting in higher-quality m-plane ZnO films.

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Symmetrical dipole contribution from planar defects on m-plane ZnO epitaxial films

Abstract

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