Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

Kai Hsuan Lee; Ping Chuan Chang; Tse Pu Chen; Sheng Po Chang; Hung Wei Shiu; Lo Yueh Chang; Chia Hao Chen; Shoou Jinn Chang

doi:10.1063/1.4793434

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

Kai Hsuan Lee, Ping Chuan Chang, Tse Pu Chen, Sheng Po Chang, Hung Wei Shiu, Lo Yueh Chang, Chia Hao Chen, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

Original language	English
Article number	072104
Journal	Applied Physics Letters
Volume	102
Issue number	7
DOIs	https://doi.org/10.1063/1.4793434
Publication status	Published - 2013 Feb 18

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4793434

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@article{10b008a56ea74f2890c550d63547fef7,

title = "Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction",

abstract = "Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.",

author = "Lee, {Kai Hsuan} and Chang, {Ping Chuan} and Chen, {Tse Pu} and Chang, {Sheng Po} and Shiu, {Hung Wei} and Chang, {Lo Yueh} and Chen, {Chia Hao} and Chang, {Shoou Jinn}",

note = "Funding Information: This work was supported in part by the National Science Council under Contract Nos. NSC 101-2221-E-168-024 and 101-2221-E-006-139.",

year = "2013",

month = feb,

day = "18",

doi = "10.1063/1.4793434",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

AU - Lee, Kai Hsuan

AU - Chang, Ping Chuan

AU - Chen, Tse Pu

AU - Chang, Sheng Po

AU - Shiu, Hung Wei

AU - Chang, Lo Yueh

AU - Chen, Chia Hao

AU - Chang, Shoou Jinn

N1 - Funding Information: This work was supported in part by the National Science Council under Contract Nos. NSC 101-2221-E-168-024 and 101-2221-E-006-139.

PY - 2013/2/18

Y1 - 2013/2/18

N2 - Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

AB - Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

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U2 - 10.1063/1.4793434

DO - 10.1063/1.4793434

M3 - Article

AN - SCOPUS:84874521255

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072104

ER -

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

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