Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

Kai Hsuan Lee, Ping Chuan Chang, Tse Pu Chen, Sheng Po Chang, Hung Wei Shiu, Lo Yueh Chang, Chia Hao Chen, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

Original languageEnglish
Article number072104
JournalApplied Physics Letters
Volume102
Issue number7
DOIs
Publication statusPublished - 2013 Feb 18

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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