TY - JOUR
T1 - Syntheses, crystal Structures and electronic Structures of new metal chalcoiodides Bi2CuSe3I and Bi6Cu3S10I
AU - Liang, I. Chu
AU - Bilc, Daniel I.
AU - Manoli, Maria
AU - Chang, Wei Yun
AU - Lin, Wen Fu
AU - Kyratsi, Theodora
AU - Hsu, Kuei Fang
N1 - Funding Information:
We thank Ministry of Science and Technology of Taiwan for financial support ( NSC102-2113-M-006-009 and MOST103-2113-M006-002 ), and acknowledge as the assistance received from the NSC High Valued Instrument Centers , and NCKU Instrument Development Center . D.I.B. also acknowledges additional financial support from the Romanian National Authority for Scientific Research , CNCS-UEFISCDI , Project number PN-II-RU-TE-2011-3-0085 .
Publisher Copyright:
© 2015 Elsevier Inc. All rights reserved.
PY - 2016/2/1
Y1 - 2016/2/1
N2 - Two new metal chalcoiodides were synthesized by solid-state reactions at 400 °C. Crystal Data: Bi2CuSe3I, 1, monoclinic, C2/m, a=14.243(2) Å, b=4.1937(7) Å, c=14.647(2) Å, β=116.095(2)°, V=785.7(2) Å3, and Z=4; Bi6Cu3S10I, 2, orthorhombic, Pnma, a=17.476(2) Å, b=4.0078(4) Å, c=27.391(2) Å, V=1918.5(3) Å3, and Z=4. Compound 1 adopts a three-dimensional structure formed by two alternative layers, which consist of BiSe5 square pyramids, BiSe4I2 octahedra, CuSe4 tetrahedra, and CuSe2I2 tetrahedra. Compound 2 possesses a new open framework built up of BiS5 square pyramides, BiS6 octahedra, BiS8 polyhedra, and CuS4 tetrahedra where I- anions are uniquely trapped within the tunnels. Both electronic structures reveal that bismuth and chalcogenide orbitals dominate the bandgaps. The Cu d and I p states contribute to the top of valence bands, in which the distribution of I orbitals may correspond to the relative bonding interactions in 1 and 2. The optical bandgaps determined by the diffuse reflectance spectra are 0.68 eV and 0.72 eV for 1 and 2, respectively. 1 is a p-type semiconductor with high Seebeck coefficients of 460-575 μV/K in the temperature range of 300-425 K. The electrical conductivity is 0.02 S/cm at 425 K for the undoped sample. The thermal conductivity is 0.22 W/mK at 425 K.
AB - Two new metal chalcoiodides were synthesized by solid-state reactions at 400 °C. Crystal Data: Bi2CuSe3I, 1, monoclinic, C2/m, a=14.243(2) Å, b=4.1937(7) Å, c=14.647(2) Å, β=116.095(2)°, V=785.7(2) Å3, and Z=4; Bi6Cu3S10I, 2, orthorhombic, Pnma, a=17.476(2) Å, b=4.0078(4) Å, c=27.391(2) Å, V=1918.5(3) Å3, and Z=4. Compound 1 adopts a three-dimensional structure formed by two alternative layers, which consist of BiSe5 square pyramids, BiSe4I2 octahedra, CuSe4 tetrahedra, and CuSe2I2 tetrahedra. Compound 2 possesses a new open framework built up of BiS5 square pyramides, BiS6 octahedra, BiS8 polyhedra, and CuS4 tetrahedra where I- anions are uniquely trapped within the tunnels. Both electronic structures reveal that bismuth and chalcogenide orbitals dominate the bandgaps. The Cu d and I p states contribute to the top of valence bands, in which the distribution of I orbitals may correspond to the relative bonding interactions in 1 and 2. The optical bandgaps determined by the diffuse reflectance spectra are 0.68 eV and 0.72 eV for 1 and 2, respectively. 1 is a p-type semiconductor with high Seebeck coefficients of 460-575 μV/K in the temperature range of 300-425 K. The electrical conductivity is 0.02 S/cm at 425 K for the undoped sample. The thermal conductivity is 0.22 W/mK at 425 K.
UR - http://www.scopus.com/inward/record.url?scp=84948671334&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84948671334&partnerID=8YFLogxK
U2 - 10.1016/j.jssc.2015.09.030
DO - 10.1016/j.jssc.2015.09.030
M3 - Article
AN - SCOPUS:84948671334
SN - 0022-4596
VL - 234
SP - 1
EP - 8
JO - Journal of Solid State Chemistry
JF - Journal of Solid State Chemistry
ER -