Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (InxGa1-x) S2 nanowires by electrospun route

Lin Jer Chen; Jiunn Der Liao; Yu Ju Chuang

doi:10.1016/j.tsf.2011.01.387

Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (In_xGa_1-x) S₂ nanowires by electrospun route

Lin Jer Chen, Jiunn Der Liao, Yu Ju Chuang

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Chalcopyrite Cu(In_0.8Ga_0.2)S₂ (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl_3, GaCl ₃ and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.

Original language	English
Pages (from-to)	3658-3662
Number of pages	5
Journal	Thin Solid Films
Volume	519
Issue number	11
DOIs	https://doi.org/10.1016/j.tsf.2011.01.387
Publication status	Published - 2011 Mar 31

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (InxGa1-x) S2 nanowires by electrospun route",

abstract = "Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.",

author = "Chen, {Lin Jer} and Liao, {Jiunn Der} and Chuang, {Yu Ju}",

year = "2011",

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journal = "Thin Solid Films",

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T1 - Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (InxGa1-x) S2 nanowires by electrospun route

AU - Chen, Lin Jer

AU - Liao, Jiunn Der

AU - Chuang, Yu Ju

PY - 2011/3/31

Y1 - 2011/3/31

N2 - Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.

AB - Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.

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