Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (InxGa1-x) S2 nanowires by electrospun route

Lin Jer Chen, Jiunn Der Liao, Yu Ju Chuang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.

Original languageEnglish
Pages (from-to)3658-3662
Number of pages5
JournalThin Solid Films
Volume519
Issue number11
DOIs
Publication statusPublished - 2011 Mar 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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