Abstract
Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.
| Original language | English |
|---|---|
| Pages (from-to) | 3658-3662 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 519 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2011 Mar 31 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Metals and Alloys
- Surfaces, Coatings and Films
- Surfaces and Interfaces
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Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (InxGa1-x) S2 nanowires by electrospun route. / Chen, Lin Jer; Liao, Jiunn-Der; Chuang, Yu Ju.
In: Thin Solid Films, Vol. 519, No. 11, 31.03.2011, p. 3658-3662.Research output: Contribution to journal › Article
TY - JOUR
T1 - Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (InxGa1-x) S2 nanowires by electrospun route
AU - Chen, Lin Jer
AU - Liao, Jiunn-Der
AU - Chuang, Yu Ju
PY - 2011/3/31
Y1 - 2011/3/31
N2 - Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.
AB - Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.
UR - http://www.scopus.com/inward/record.url?scp=79952739405&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952739405&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2011.01.387
DO - 10.1016/j.tsf.2011.01.387
M3 - Article
VL - 519
SP - 3658
EP - 3662
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 11
ER -