Abstract
Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.
Original language | English |
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Pages (from-to) | 3658-3662 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 519 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2011 Mar 31 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry