Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (InxGa1-x) S2 nanowires by electrospun route

Lin Jer Chen, Jiunn-Der Liao, Yu Ju Chuang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.

Original languageEnglish
Pages (from-to)3658-3662
Number of pages5
JournalThin Solid Films
Volume519
Issue number11
DOIs
Publication statusPublished - 2011 Mar 31

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Nanowires
nanowires
routes
Semiconductor materials
synthesis
Annealing
annealing
Electric potential
electric potential
chalcopyrite
Experiments
polyvinylbutyral

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

@article{50759735c82941bfb5a36e99fb06bf5f,
title = "Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (InxGa1-x) S2 nanowires by electrospun route",
abstract = "Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40{\%} at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.",
author = "Chen, {Lin Jer} and Jiunn-Der Liao and Chuang, {Yu Ju}",
year = "2011",
month = "3",
day = "31",
doi = "10.1016/j.tsf.2011.01.387",
language = "English",
volume = "519",
pages = "3658--3662",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "11",

}

Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (InxGa1-x) S2 nanowires by electrospun route. / Chen, Lin Jer; Liao, Jiunn-Der; Chuang, Yu Ju.

In: Thin Solid Films, Vol. 519, No. 11, 31.03.2011, p. 3658-3662.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (InxGa1-x) S2 nanowires by electrospun route

AU - Chen, Lin Jer

AU - Liao, Jiunn-Der

AU - Chuang, Yu Ju

PY - 2011/3/31

Y1 - 2011/3/31

N2 - Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.

AB - Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.

UR - http://www.scopus.com/inward/record.url?scp=79952739405&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952739405&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.01.387

DO - 10.1016/j.tsf.2011.01.387

M3 - Article

VL - 519

SP - 3658

EP - 3662

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 11

ER -