Synthesis and characterization of indium nitride nanowires by plasma-assisted chemical vapor deposition

Yi Kuei Chang, Franklin Chau Nan Hong

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

High-quality indium nitride (InN) nanowires were synthesized in a high temperature furnace on Au-coated Si substrates through the reaction of indium metal vapor with highly reactive nitrogen radicals generated by N2 plasma. Highly-reactive nitrogen radicals provided a wide process window for the synthesis of InN nanowires by lowering the process temperature to avoid the decomposition of InN. X-ray diffraction, transmission electron microscopy and Raman spectra further showed that the as-synthesized InN nanowires were perfect single crystallites of wurtzite structure with the growth direction along [110].

Original languageEnglish
Pages (from-to)1855-1858
Number of pages4
JournalMaterials Letters
Volume63
Issue number21
DOIs
Publication statusPublished - 2009 Aug 31

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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