TY - JOUR
T1 - Synthesis of CZTSe nanoink via a facile one-pot heating route based on polyetheramine chelation
AU - Lee, Pay Yu
AU - Chang, Sheng Po
AU - Hsu, En Hao
AU - Chang, Shoou Jinn
N1 - Funding Information:
The authors would like to thank the National Science Council and the Bureau of Energy, Ministry of Economic Affairs of Taiwan, for financial support under Contract nos. 101-2221-E-006–139 and 101-D0204-6 , and the LED Lighting Research Center of NCKU for assistance with device characterization. This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, the National Cheng Kung University, Taiwan, as well as by the Advanced Optoelectronic Technology Center, the National Cheng Kung University, under projects from the Ministry of Education.
PY - 2014/9
Y1 - 2014/9
N2 - In this paper, we report a systematic study of the growth and evolution mechanism of quaternary Cu2ZnSnSe4 (CZTSe) nanocrystals (NCs) in a polyetheramine solvent. To the best of our knowledge, this is the first study on the growth mechanism of CZTSe NCs based on polyetheramine chelation. Pure-phase CZTSe NCs were synthesized by a facile one-pot heating process. High-quality CZTSe NCs were easily obtained by mixing the precursors and simply heating them to the reaction temperature. Synthesis parameters, including reaction temperature, reaction time, and precursor concentration, which influence the morphology, size, and monodispersity of CZTSe NCs, were studied in detail. Time- and temperature-dependent experiments were performed to observe the growth of CZTSe NCs. The final CZTSe NCs were evolved from triangle-like Cu2Se crystals to pure spherical crystals. On the basis of detailed time-dependent shape and elemental composition evaluations, a possible asynchronous doping growth and formation mechanism is proposed. Moreover, the optical and electrical properties of pure CZTSe NCs were also investigated. The band gap of CZTSe was approximately 1.57 eV, which is close to the optimum value for solar photoelectric conversion. Further, the investigation of the current-voltage characteristics and Hall effect revealed p-type conduction, and the hole carrier concentration, hole mobility, and resistivity were found to be 3.11×1018 cm-3, 8.28 cm2/V-s, and 0.24 Ω-cm, respectively. These results indicate that CZTSe NCs are suitable for use as an absorber layer in low-cost solar cells.
AB - In this paper, we report a systematic study of the growth and evolution mechanism of quaternary Cu2ZnSnSe4 (CZTSe) nanocrystals (NCs) in a polyetheramine solvent. To the best of our knowledge, this is the first study on the growth mechanism of CZTSe NCs based on polyetheramine chelation. Pure-phase CZTSe NCs were synthesized by a facile one-pot heating process. High-quality CZTSe NCs were easily obtained by mixing the precursors and simply heating them to the reaction temperature. Synthesis parameters, including reaction temperature, reaction time, and precursor concentration, which influence the morphology, size, and monodispersity of CZTSe NCs, were studied in detail. Time- and temperature-dependent experiments were performed to observe the growth of CZTSe NCs. The final CZTSe NCs were evolved from triangle-like Cu2Se crystals to pure spherical crystals. On the basis of detailed time-dependent shape and elemental composition evaluations, a possible asynchronous doping growth and formation mechanism is proposed. Moreover, the optical and electrical properties of pure CZTSe NCs were also investigated. The band gap of CZTSe was approximately 1.57 eV, which is close to the optimum value for solar photoelectric conversion. Further, the investigation of the current-voltage characteristics and Hall effect revealed p-type conduction, and the hole carrier concentration, hole mobility, and resistivity were found to be 3.11×1018 cm-3, 8.28 cm2/V-s, and 0.24 Ω-cm, respectively. These results indicate that CZTSe NCs are suitable for use as an absorber layer in low-cost solar cells.
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U2 - 10.1016/j.solmat.2014.05.005
DO - 10.1016/j.solmat.2014.05.005
M3 - Article
AN - SCOPUS:84901988057
SN - 0927-0248
VL - 128
SP - 156
EP - 165
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
ER -