TY - JOUR
T1 - Synthesis of hybrid diamond films via two-step microwave enhanced chemical vapor deposition process for enhancing the electron field emission properties
AU - Saravanan, Adhimoorthy
AU - Huang, Bohr Ran
AU - Manoharan, Divinah
AU - Dong, Chung Li
AU - Lin, I. Nan
N1 - Funding Information:
The authors would like to thank the financial support of the Ministry of Science and Technology of the People''s Republic of China, through the project no. MOST 104-2112-M-032-003.
Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2016/3/1
Y1 - 2016/3/1
N2 - Hybrid diamond materials (HBDs) were synthesized using a two-step bias enhanced nucleation and growth process (BEN-BEG). The secondary BEG process efficiently altered the granular structure of the underlying ultrananocrystalline diamond (UNCD) films, rather than growing a nanocrystalline diamond (NCD) film on the top of the UNCD layer. Nanographite clusters were formed when the coalescence of ultra-small diamond grains was induced due to the secondary BEG process that enhanced the transport efficiency of electrons and thus improved the electron field emission (EFE) properties of the HBD films. However, the depth of interaction increased with the magnitude of the bias voltage applied in the secondary BEG process. Therefore, large enough bias voltage (- 300 V) is required in the secondary BEG process to convert the whole thickness of UNCD films into HBD ones. The EFE properties of HBD- 300 V films can be turned on at a low field of E0 = 3.36 V/μm and attained a high EFE current density of Je = 4.57 mA/cm2 at an applied field of 6.4 V/μm. The synthesis of HBD films with high conductivity and excellent EFE behavior enables them to be better EFE emitters with improved performance in flat panel display applications.
AB - Hybrid diamond materials (HBDs) were synthesized using a two-step bias enhanced nucleation and growth process (BEN-BEG). The secondary BEG process efficiently altered the granular structure of the underlying ultrananocrystalline diamond (UNCD) films, rather than growing a nanocrystalline diamond (NCD) film on the top of the UNCD layer. Nanographite clusters were formed when the coalescence of ultra-small diamond grains was induced due to the secondary BEG process that enhanced the transport efficiency of electrons and thus improved the electron field emission (EFE) properties of the HBD films. However, the depth of interaction increased with the magnitude of the bias voltage applied in the secondary BEG process. Therefore, large enough bias voltage (- 300 V) is required in the secondary BEG process to convert the whole thickness of UNCD films into HBD ones. The EFE properties of HBD- 300 V films can be turned on at a low field of E0 = 3.36 V/μm and attained a high EFE current density of Je = 4.57 mA/cm2 at an applied field of 6.4 V/μm. The synthesis of HBD films with high conductivity and excellent EFE behavior enables them to be better EFE emitters with improved performance in flat panel display applications.
UR - https://www.scopus.com/pages/publications/84955262623
UR - https://www.scopus.com/pages/publications/84955262623#tab=citedBy
U2 - 10.1016/j.diamond.2015.12.018
DO - 10.1016/j.diamond.2015.12.018
M3 - Article
AN - SCOPUS:84955262623
SN - 0925-9635
VL - 63
SP - 211
EP - 217
JO - Diamond and Related Materials
JF - Diamond and Related Materials
ER -