Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition

Han Ching Chang, Chien Liang Tu, Kuang-I Lin, Jiang Pu, Taishi Takenobu, Chien Nan Hsiao, Chang Hsiao Chen

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from the scientific community due to their high mobility transport and fascinating physical properties. To date, reports on the synthesis of high-quality and scalable InSe atomic films are limited. Here, a synthesis of InSe atomic layers by vapor phase selenization of In2O3 in a chemical vapor deposition (CVD) system, resulting in large-area monolayer flakes or thin films, is reported. The atomic films are continuous and uniform over a large area of 1 × 1 cm2, comprising of primarily InSe monolayers. Spectroscopic and microscopic measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion-gel-gated field-effect transistors based on CVD InSe monolayers exhibit n-type channel behaviors, where the field effect electron mobility values can be up to ≈30 cm2 V−1 s−1 along with an on/off current ratio, of >104 at room temperature. In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling the possibility of reassembly of various 2D materials into vertically stacked heterostructures, prompting research efforts to probe its characteristics and applications.

Original languageEnglish
Article number1802351
JournalSmall
Volume14
Issue number39
DOIs
Publication statusPublished - 2018 Sep 27

Fingerprint

Indium
Chemical vapor deposition
Monolayers
Graphite
Electron mobility
Field effect transistors
Graphene
Heterojunctions
Gels
Physical properties
Vapors
Electrons
Ions
Crystalline materials
Thin films
Oxidation
Temperature
Substrates
Research

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)
  • Engineering (miscellaneous)

Cite this

Chang, H. C., Tu, C. L., Lin, K-I., Pu, J., Takenobu, T., Hsiao, C. N., & Chen, C. H. (2018). Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition. Small, 14(39), [1802351]. https://doi.org/10.1002/smll.201802351
Chang, Han Ching ; Tu, Chien Liang ; Lin, Kuang-I ; Pu, Jiang ; Takenobu, Taishi ; Hsiao, Chien Nan ; Chen, Chang Hsiao. / Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition. In: Small. 2018 ; Vol. 14, No. 39.
@article{16d9d2f446684131a5b21aa5f036be9c,
title = "Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition",
abstract = "Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from the scientific community due to their high mobility transport and fascinating physical properties. To date, reports on the synthesis of high-quality and scalable InSe atomic films are limited. Here, a synthesis of InSe atomic layers by vapor phase selenization of In2O3 in a chemical vapor deposition (CVD) system, resulting in large-area monolayer flakes or thin films, is reported. The atomic films are continuous and uniform over a large area of 1 × 1 cm2, comprising of primarily InSe monolayers. Spectroscopic and microscopic measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion-gel-gated field-effect transistors based on CVD InSe monolayers exhibit n-type channel behaviors, where the field effect electron mobility values can be up to ≈30 cm2 V−1 s−1 along with an on/off current ratio, of >104 at room temperature. In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling the possibility of reassembly of various 2D materials into vertically stacked heterostructures, prompting research efforts to probe its characteristics and applications.",
author = "Chang, {Han Ching} and Tu, {Chien Liang} and Kuang-I Lin and Jiang Pu and Taishi Takenobu and Hsiao, {Chien Nan} and Chen, {Chang Hsiao}",
year = "2018",
month = "9",
day = "27",
doi = "10.1002/smll.201802351",
language = "English",
volume = "14",
journal = "Small",
issn = "1613-6810",
publisher = "Wiley-VCH Verlag",
number = "39",

}

Chang, HC, Tu, CL, Lin, K-I, Pu, J, Takenobu, T, Hsiao, CN & Chen, CH 2018, 'Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition', Small, vol. 14, no. 39, 1802351. https://doi.org/10.1002/smll.201802351

Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition. / Chang, Han Ching; Tu, Chien Liang; Lin, Kuang-I; Pu, Jiang; Takenobu, Taishi; Hsiao, Chien Nan; Chen, Chang Hsiao.

In: Small, Vol. 14, No. 39, 1802351, 27.09.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition

AU - Chang, Han Ching

AU - Tu, Chien Liang

AU - Lin, Kuang-I

AU - Pu, Jiang

AU - Takenobu, Taishi

AU - Hsiao, Chien Nan

AU - Chen, Chang Hsiao

PY - 2018/9/27

Y1 - 2018/9/27

N2 - Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from the scientific community due to their high mobility transport and fascinating physical properties. To date, reports on the synthesis of high-quality and scalable InSe atomic films are limited. Here, a synthesis of InSe atomic layers by vapor phase selenization of In2O3 in a chemical vapor deposition (CVD) system, resulting in large-area monolayer flakes or thin films, is reported. The atomic films are continuous and uniform over a large area of 1 × 1 cm2, comprising of primarily InSe monolayers. Spectroscopic and microscopic measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion-gel-gated field-effect transistors based on CVD InSe monolayers exhibit n-type channel behaviors, where the field effect electron mobility values can be up to ≈30 cm2 V−1 s−1 along with an on/off current ratio, of >104 at room temperature. In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling the possibility of reassembly of various 2D materials into vertically stacked heterostructures, prompting research efforts to probe its characteristics and applications.

AB - Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from the scientific community due to their high mobility transport and fascinating physical properties. To date, reports on the synthesis of high-quality and scalable InSe atomic films are limited. Here, a synthesis of InSe atomic layers by vapor phase selenization of In2O3 in a chemical vapor deposition (CVD) system, resulting in large-area monolayer flakes or thin films, is reported. The atomic films are continuous and uniform over a large area of 1 × 1 cm2, comprising of primarily InSe monolayers. Spectroscopic and microscopic measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion-gel-gated field-effect transistors based on CVD InSe monolayers exhibit n-type channel behaviors, where the field effect electron mobility values can be up to ≈30 cm2 V−1 s−1 along with an on/off current ratio, of >104 at room temperature. In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling the possibility of reassembly of various 2D materials into vertically stacked heterostructures, prompting research efforts to probe its characteristics and applications.

UR - http://www.scopus.com/inward/record.url?scp=85052839002&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052839002&partnerID=8YFLogxK

U2 - 10.1002/smll.201802351

DO - 10.1002/smll.201802351

M3 - Article

C2 - 30152600

AN - SCOPUS:85052839002

VL - 14

JO - Small

JF - Small

SN - 1613-6810

IS - 39

M1 - 1802351

ER -

Chang HC, Tu CL, Lin K-I, Pu J, Takenobu T, Hsiao CN et al. Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition. Small. 2018 Sep 27;14(39). 1802351. https://doi.org/10.1002/smll.201802351