Synthetic properties of the c-axis tilted AlN thin films

Chung Jen Chung, Ching Liang Wei, Po Tsung Hsieh, Chao Yu Huang, Jen Fin Lin, Ying Chung Chen, Chien Chuan Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Aluminum nitride (AlN) is one of the most popular piezoelectric materials for high frequency resonators, filters and sensors. The piezoelectric property, i.e. electromechanical coupling coefficient, of AlN thin film is highly related to its crystalline orientation. AlN thin films with various c-axis-tilted angles can be fabricated by the RF sputtering technique. The crystallization and grain growth orientations of AlN thin film are examined by XRD, SEM, and TEM, while the bonding condition and nano-mechanical properties are investigated by a raman system and a nano-indentation technique.

Original languageEnglish
Title of host publicationPRICM7
PublisherTrans Tech Publications Ltd
Pages1780-1783
Number of pages4
ISBN (Print)0878492550, 9780878492558
DOIs
Publication statusPublished - 2010 Jan 1
Event7th Pacific Rim International Conference on Advanced Materials and Processing, PRICM-7 - Cairns, QLD, Australia
Duration: 2010 Aug 22010 Aug 6

Publication series

NameMaterials Science Forum
Volume654-656
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other7th Pacific Rim International Conference on Advanced Materials and Processing, PRICM-7
CountryAustralia
CityCairns, QLD
Period10-08-0210-08-06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Chung, C. J., Wei, C. L., Hsieh, P. T., Huang, C. Y., Lin, J. F., Chen, Y. C., & Cheng, C. C. (2010). Synthetic properties of the c-axis tilted AlN thin films. In PRICM7 (pp. 1780-1783). (Materials Science Forum; Vol. 654-656). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.654-656.1780