Systematic studies of the nucleation and growth of ultrananocrystalline diamond films on silicon substrates coated with a tungsten layer

Yueh Chieh Chu, Chia-Hao Tu, Gerald Jiang, Chi Chang, Chuan-Pu Liu, Jyh-Ming Ting, Hsin Li Lee, Yon-Hua Tzeng, Orlando Auciello

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report on effects of a tungsten layer deposited on silicon surface on the effectiveness for diamond nanoparticles to be seeded for the deposition of ultrananocrystalline diamond (UNCD). Rough tungsten surface and electrostatic forces between nanodiamond seeds and the tungsten surface layer help to improve the adhesion of nanodiamond seeds on the tungsten surface. The seeding density on tungsten coated silicon thus increases. Tungsten carbide is formed by reactions of the tungsten layer with carbon containing plasma species. It provides favorable (001) crystal planes for the nucleation of (111) crystal planes by Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) in argon diluted methane plasma and further improves the density of diamond seeds/nuclei. UNCD films grown at different gas pressures on tungsten coated silicon which is pre-seeded by nanodiamond along with heteroepitaxially nucleated diamond nuclei were characterized by Raman scattering, field emission-scanning electron microscopy, and high resolution-transmission electron microscopy.

Original languageEnglish
Article number124328
JournalJournal of Applied Physics
Volume111
Issue number12
DOIs
Publication statusPublished - 2012 Jun 15

Fingerprint

diamond films
tungsten
nucleation
silicon
diamonds
seeds
nuclei
tungsten carbides
inoculation
crystals
gas pressure
field emission
surface layers
adhesion
methane
argon
vapor deposition
Raman spectra
electrostatics
microwaves

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{38ff5d5b8f0c46fcad37900ac45faf85,
title = "Systematic studies of the nucleation and growth of ultrananocrystalline diamond films on silicon substrates coated with a tungsten layer",
abstract = "We report on effects of a tungsten layer deposited on silicon surface on the effectiveness for diamond nanoparticles to be seeded for the deposition of ultrananocrystalline diamond (UNCD). Rough tungsten surface and electrostatic forces between nanodiamond seeds and the tungsten surface layer help to improve the adhesion of nanodiamond seeds on the tungsten surface. The seeding density on tungsten coated silicon thus increases. Tungsten carbide is formed by reactions of the tungsten layer with carbon containing plasma species. It provides favorable (001) crystal planes for the nucleation of (111) crystal planes by Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) in argon diluted methane plasma and further improves the density of diamond seeds/nuclei. UNCD films grown at different gas pressures on tungsten coated silicon which is pre-seeded by nanodiamond along with heteroepitaxially nucleated diamond nuclei were characterized by Raman scattering, field emission-scanning electron microscopy, and high resolution-transmission electron microscopy.",
author = "Chu, {Yueh Chieh} and Chia-Hao Tu and Gerald Jiang and Chi Chang and Chuan-Pu Liu and Jyh-Ming Ting and Lee, {Hsin Li} and Yon-Hua Tzeng and Orlando Auciello",
year = "2012",
month = "6",
day = "15",
doi = "10.1063/1.4729798",
language = "English",
volume = "111",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

Systematic studies of the nucleation and growth of ultrananocrystalline diamond films on silicon substrates coated with a tungsten layer. / Chu, Yueh Chieh; Tu, Chia-Hao; Jiang, Gerald; Chang, Chi; Liu, Chuan-Pu; Ting, Jyh-Ming; Lee, Hsin Li; Tzeng, Yon-Hua; Auciello, Orlando.

In: Journal of Applied Physics, Vol. 111, No. 12, 124328, 15.06.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Systematic studies of the nucleation and growth of ultrananocrystalline diamond films on silicon substrates coated with a tungsten layer

AU - Chu, Yueh Chieh

AU - Tu, Chia-Hao

AU - Jiang, Gerald

AU - Chang, Chi

AU - Liu, Chuan-Pu

AU - Ting, Jyh-Ming

AU - Lee, Hsin Li

AU - Tzeng, Yon-Hua

AU - Auciello, Orlando

PY - 2012/6/15

Y1 - 2012/6/15

N2 - We report on effects of a tungsten layer deposited on silicon surface on the effectiveness for diamond nanoparticles to be seeded for the deposition of ultrananocrystalline diamond (UNCD). Rough tungsten surface and electrostatic forces between nanodiamond seeds and the tungsten surface layer help to improve the adhesion of nanodiamond seeds on the tungsten surface. The seeding density on tungsten coated silicon thus increases. Tungsten carbide is formed by reactions of the tungsten layer with carbon containing plasma species. It provides favorable (001) crystal planes for the nucleation of (111) crystal planes by Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) in argon diluted methane plasma and further improves the density of diamond seeds/nuclei. UNCD films grown at different gas pressures on tungsten coated silicon which is pre-seeded by nanodiamond along with heteroepitaxially nucleated diamond nuclei were characterized by Raman scattering, field emission-scanning electron microscopy, and high resolution-transmission electron microscopy.

AB - We report on effects of a tungsten layer deposited on silicon surface on the effectiveness for diamond nanoparticles to be seeded for the deposition of ultrananocrystalline diamond (UNCD). Rough tungsten surface and electrostatic forces between nanodiamond seeds and the tungsten surface layer help to improve the adhesion of nanodiamond seeds on the tungsten surface. The seeding density on tungsten coated silicon thus increases. Tungsten carbide is formed by reactions of the tungsten layer with carbon containing plasma species. It provides favorable (001) crystal planes for the nucleation of (111) crystal planes by Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) in argon diluted methane plasma and further improves the density of diamond seeds/nuclei. UNCD films grown at different gas pressures on tungsten coated silicon which is pre-seeded by nanodiamond along with heteroepitaxially nucleated diamond nuclei were characterized by Raman scattering, field emission-scanning electron microscopy, and high resolution-transmission electron microscopy.

UR - http://www.scopus.com/inward/record.url?scp=84863525012&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863525012&partnerID=8YFLogxK

U2 - 10.1063/1.4729798

DO - 10.1063/1.4729798

M3 - Article

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 124328

ER -