Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene

H. H. Chen, S. H. Su, S. L. Chang, B. Y. Cheng, S. W. Chen, H. Y. Chen, M. F. Lin, J. C.A. Huang

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


To improve graphene-based multifunctional devices at nanoscale, a stepwise and controllable fabrication procedure must be elucidated. Here, a series of structural transition of bismuth (Bi) adatoms, adsorbed on monolayer epitaxial graphene (MEG), is explored at room temperature. Bi adatoms undergo a structural transition from one-dimensional (1D) linear structures to two-dimensional (2D) triangular islands and such 2D growth mode is affected by the corrugated substrate. Upon Bi deposition, a little charge transfer occurs and a characteristic peak can be observed in the tunneling spectrum, reflecting the distinctive electronic structure of the Bi adatoms. When annealed to ∼500K, 2D triangular Bi islands aggregate into Bi nanoclusters (NCs) of uniform size. A well-controlled fabrication method is thus demonstrated. The approaches adopted herein provide perspectives for fabricating and characterizing periodic networks on MEG and related systems, which are useful in realizing graphene-based electronic, energy, sensor and spintronic devices.

Original languageEnglish
Article number11623
JournalScientific reports
Publication statusPublished - 2015 Jun 23

All Science Journal Classification (ASJC) codes

  • General


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