Abstract
Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO 3 (BFO) and La 0.7 Sr 0.3 MnO 3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.
| Original language | English |
|---|---|
| Article number | 1806335 |
| Journal | Advanced Materials |
| Volume | 31 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2019 Mar 15 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Tailoring Magnetoelectric Coupling in BiFeO 3 /La 0.7 Sr 0.3 MnO 3 Heterostructure through the Interface Engineering . / Yi, Di; Yu, Pu; Chen, Yi Chun; Lee, Hsin Hua; He, Qing; Chu, Ying Hao; Ramesh, Ramamoorthy.
In: Advanced Materials, Vol. 31, No. 11, 1806335, 15.03.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Tailoring Magnetoelectric Coupling in BiFeO 3 /La 0.7 Sr 0.3 MnO 3 Heterostructure through the Interface Engineering
AU - Yi, Di
AU - Yu, Pu
AU - Chen, Yi Chun
AU - Lee, Hsin Hua
AU - He, Qing
AU - Chu, Ying Hao
AU - Ramesh, Ramamoorthy
PY - 2019/3/15
Y1 - 2019/3/15
N2 - Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO 3 (BFO) and La 0.7 Sr 0.3 MnO 3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.
AB - Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO 3 (BFO) and La 0.7 Sr 0.3 MnO 3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.
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U2 - 10.1002/adma.201806335
DO - 10.1002/adma.201806335
M3 - Article
C2 - 30663174
AN - SCOPUS:85060340263
VL - 31
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 11
M1 - 1806335
ER -