Tailoring Magnetoelectric Coupling in BiFeO                         3                         /La                         0.7                         Sr                         0.3                         MnO                         3                          Heterostructure through the Interface Engineering

Di Yi; Pu Yu; Yi Chun Chen; Hsin Hua Lee; Qing He; Ying Hao Chu; Ramamoorthy Ramesh

doi:10.1002/adma.201806335

Tailoring Magnetoelectric Coupling in BiFeO ₃ /La _0.7 Sr _0.3 MnO ₃ Heterostructure through the Interface Engineering

Di Yi, Pu Yu, Yi Chun Chen, Hsin Hua Lee, Qing He, Ying Hao Chu, Ramamoorthy Ramesh

Department of Physics

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO ₃ (BFO) and La _0.7 Sr _0.3 MnO ₃ (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.

Original language	English
Article number	1806335
Journal	Advanced Materials
Volume	31
Issue number	11
DOIs	https://doi.org/10.1002/adma.201806335
Publication status	Published - 2019 Mar 15

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/adma.201806335

Cite this

Yi, D., Yu, P., Chen, Y. C., Lee, H. H., He, Q., Chu, Y. H., & Ramesh, R. (2019). Tailoring Magnetoelectric Coupling in BiFeO ₃ /La _0.7 Sr _0.3 MnO ₃ Heterostructure through the Interface Engineering Advanced Materials, 31(11), [1806335]. https://doi.org/10.1002/adma.201806335

Yi, Di ; Yu, Pu ; Chen, Yi Chun ; Lee, Hsin Hua ; He, Qing ; Chu, Ying Hao ; Ramesh, Ramamoorthy. / Tailoring Magnetoelectric Coupling in BiFeO ₃ /La _0.7 Sr _0.3 MnO ₃ Heterostructure through the Interface Engineering In: Advanced Materials. 2019 ; Vol. 31, No. 11.

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title = " Tailoring Magnetoelectric Coupling in BiFeO 3 /La 0.7 Sr 0.3 MnO 3 Heterostructure through the Interface Engineering ",

abstract = " Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO 3 (BFO) and La 0.7 Sr 0.3 MnO 3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices. ",

author = "Di Yi and Pu Yu and Chen, {Yi Chun} and Lee, {Hsin Hua} and Qing He and Chu, {Ying Hao} and Ramamoorthy Ramesh",

note = "Funding Information: The research at UC Berkeley was supported by the SRC-JUMP center, ASCENT. D.Y. was funded by Materials Research Science and Engineering Centers Grant DMR 1420620 when he was a Ph.D. student at Berkeley. P.Y. was financially supported by the Basic Science Center Project of NFSC under grant No. 51788104 and the National Basic Research Program of China (Grant Nos. 2015CB921700 and 2016YFA0301004). Q.H. also acknowledges the support by the Engineering and Physical Sciences Research Council with grant reference EP/N016718/1. Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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Yi, D, Yu, P, Chen, YC, Lee, HH, He, Q, Chu, YH & Ramesh, R 2019, ' Tailoring Magnetoelectric Coupling in BiFeO ₃ /La _0.7 Sr _0.3 MnO ₃ Heterostructure through the Interface Engineering ', Advanced Materials, vol. 31, no. 11, 1806335. https://doi.org/10.1002/adma.201806335

Tailoring Magnetoelectric Coupling in BiFeO ₃ /La _0.7 Sr _0.3 MnO ₃ Heterostructure through the Interface Engineering . / Yi, Di; Yu, Pu; Chen, Yi Chun; Lee, Hsin Hua; He, Qing; Chu, Ying Hao; Ramesh, Ramamoorthy.

In: Advanced Materials, Vol. 31, No. 11, 1806335, 15.03.2019.

Research output: Contribution to journal › Article › peer-review

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PY - 2019/3/15

Y1 - 2019/3/15

N2 - Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO 3 (BFO) and La 0.7 Sr 0.3 MnO 3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.

AB - Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO 3 (BFO) and La 0.7 Sr 0.3 MnO 3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.

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Yi D, Yu P, Chen YC, Lee HH, He Q, Chu YH et al. Tailoring Magnetoelectric Coupling in BiFeO ₃ /La _0.7 Sr _0.3 MnO ₃ Heterostructure through the Interface Engineering Advanced Materials. 2019 Mar 15;31(11). 1806335. https://doi.org/10.1002/adma.201806335