Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Yu Hsuan Lu, Yi Keng Fu, Shyh Jer Huang, Yan Kuin Su, Kang L. Wang, Manfred H. Pilkuhn, Mu Tao Chu

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL.

Original languageEnglish
Article number113102
JournalJournal of Applied Physics
Volume115
Issue number11
DOIs
Publication statusPublished - 2014 Mar 21

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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