Tailoring the charge carrier in few layers MoS                         2                          field-effect transistors by Au metal adsorbate

Arun Kumar Singh; Rajiv K. Pandey; Rajiv Prakash; Jonghwa Eom

doi:10.1016/j.apsusc.2017.12.143

Tailoring the charge carrier in few layers MoS ₂ field-effect transistors by Au metal adsorbate

Arun Kumar Singh
, Rajiv K. Pandey
, Rajiv Prakash
, Jonghwa Eom

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

It is an essential to tune the charge carrier concentrations in semiconductor in order to approach high-performance of the electronic and optoelectronic devices. Here, we report the effect of thin layer of gold (Au) metal on few layer (FL) molybdenum disulfide (MoS ₂ ) by atomic force microscopy (AFM), Raman spectroscopy and electrical charge transport measurements. The Raman spectra and charge transport measurements show that Au thin layer affect the electronic properties of the FL MoS ₂ . After deposition of Au thin layer, the threshold voltages of FL MoS ₂ field-effect transistors (FETs) shift towards positive gate voltages, this reveal the p-doping in FL MoS ₂ nanosheets. The shift of peak frequencies of the Raman bands are also analyzed after the deposition of Au metal films of different thickness on FL MoS ₂ nanosheets. The surface morphology of Au metal on FL MoS ₂ is characterized by AFM and shows the smoother and denser film in comparison to Au metal on SiO ₂ .

Original language	English
Pages (from-to)	70-74
Number of pages	5
Journal	Applied Surface Science
Volume	437
DOIs	https://doi.org/10.1016/j.apsusc.2017.12.143
Publication status	Published - 2018 Apr 15

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2017.12.143

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title = " Tailoring the charge carrier in few layers MoS 2 field-effect transistors by Au metal adsorbate ",

abstract = " It is an essential to tune the charge carrier concentrations in semiconductor in order to approach high-performance of the electronic and optoelectronic devices. Here, we report the effect of thin layer of gold (Au) metal on few layer (FL) molybdenum disulfide (MoS 2 ) by atomic force microscopy (AFM), Raman spectroscopy and electrical charge transport measurements. The Raman spectra and charge transport measurements show that Au thin layer affect the electronic properties of the FL MoS 2 . After deposition of Au thin layer, the threshold voltages of FL MoS 2 field-effect transistors (FETs) shift towards positive gate voltages, this reveal the p-doping in FL MoS 2 nanosheets. The shift of peak frequencies of the Raman bands are also analyzed after the deposition of Au metal films of different thickness on FL MoS 2 nanosheets. The surface morphology of Au metal on FL MoS 2 is characterized by AFM and shows the smoother and denser film in comparison to Au metal on SiO 2 . ",

author = "Singh, \{Arun Kumar\} and Pandey, \{Rajiv K.\} and Rajiv Prakash and Jonghwa Eom",

note = "Funding Information: This research was supported by the Department of Science and Technology (DST), India for Inspire faculty research scheme. This research was also supported by Priority Research Center Program [ 2010-0020207 ] and Basic Science Research Program [ 2016R1D1A1A09917762 ] through the National Research Foundation of Korea. Publisher Copyright: {\textcopyright} 2017 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",

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doi = "10.1016/j.apsusc.2017.12.143",

language = "English",

volume = "437",

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Tailoring the charge carrier in few layers MoS ₂ field-effect transistors by Au metal adsorbate . / Singh, Arun Kumar; Pandey, Rajiv K.; Prakash, Rajiv et al.
In: Applied Surface Science, Vol. 437, 15.04.2018, p. 70-74.

Research output: Contribution to journal › Article › peer-review

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AU - Pandey, Rajiv K.

AU - Prakash, Rajiv

AU - Eom, Jonghwa

N1 - Funding Information: This research was supported by the Department of Science and Technology (DST), India for Inspire faculty research scheme. This research was also supported by Priority Research Center Program [ 2010-0020207 ] and Basic Science Research Program [ 2016R1D1A1A09917762 ] through the National Research Foundation of Korea. Publisher Copyright: © 2017 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2018/4/15

Y1 - 2018/4/15

N2 - It is an essential to tune the charge carrier concentrations in semiconductor in order to approach high-performance of the electronic and optoelectronic devices. Here, we report the effect of thin layer of gold (Au) metal on few layer (FL) molybdenum disulfide (MoS 2 ) by atomic force microscopy (AFM), Raman spectroscopy and electrical charge transport measurements. The Raman spectra and charge transport measurements show that Au thin layer affect the electronic properties of the FL MoS 2 . After deposition of Au thin layer, the threshold voltages of FL MoS 2 field-effect transistors (FETs) shift towards positive gate voltages, this reveal the p-doping in FL MoS 2 nanosheets. The shift of peak frequencies of the Raman bands are also analyzed after the deposition of Au metal films of different thickness on FL MoS 2 nanosheets. The surface morphology of Au metal on FL MoS 2 is characterized by AFM and shows the smoother and denser film in comparison to Au metal on SiO 2 .

AB - It is an essential to tune the charge carrier concentrations in semiconductor in order to approach high-performance of the electronic and optoelectronic devices. Here, we report the effect of thin layer of gold (Au) metal on few layer (FL) molybdenum disulfide (MoS 2 ) by atomic force microscopy (AFM), Raman spectroscopy and electrical charge transport measurements. The Raman spectra and charge transport measurements show that Au thin layer affect the electronic properties of the FL MoS 2 . After deposition of Au thin layer, the threshold voltages of FL MoS 2 field-effect transistors (FETs) shift towards positive gate voltages, this reveal the p-doping in FL MoS 2 nanosheets. The shift of peak frequencies of the Raman bands are also analyzed after the deposition of Au metal films of different thickness on FL MoS 2 nanosheets. The surface morphology of Au metal on FL MoS 2 is characterized by AFM and shows the smoother and denser film in comparison to Au metal on SiO 2 .

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Tailoring the charge carrier in few layers MoS ₂ field-effect transistors by Au metal adsorbate

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