TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET

Shu Wei Chang; Jia Hon Chou; Wen Hsi Lee; Yao Jen Lee; Darsen D. Lu

doi:10.1016/j.sse.2022.108585

TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET

Shu Wei Chang
, Jia Hon Chou
, Wen Hsi Lee
, Yao Jen Lee
, Darsen D. Lu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

Radio frequency devices based on the state-of-the-art gate-all-around (GAA) nanosheet CFET process suffer from extra parasitic capacitance due to the stacked architecture compared to planar or FinFET devices. In this study, we first calibrate the TCAD process simulation model to experimental data. Subsequently, the model is applied to the simulation of RF characteristics of CFET devices with similar design as our real devices. Subsequently, the influence of various design parameters of the CFET structure are investigated, with emphasis on high frequency characteristics. The optimal design for CFET-based RF device is determined, which resulted in and f_T and f_Max improvements by 3.74 times and 8.44 times, respectively.

Original language	English
Article number	108585
Journal	Solid-State Electronics
Volume	201
DOIs	https://doi.org/10.1016/j.sse.2022.108585
Publication status	Published - 2023 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2022.108585

Cite this

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title = "TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET",

abstract = "Radio frequency devices based on the state-of-the-art gate-all-around (GAA) nanosheet CFET process suffer from extra parasitic capacitance due to the stacked architecture compared to planar or FinFET devices. In this study, we first calibrate the TCAD process simulation model to experimental data. Subsequently, the model is applied to the simulation of RF characteristics of CFET devices with similar design as our real devices. Subsequently, the influence of various design parameters of the CFET structure are investigated, with emphasis on high frequency characteristics. The optimal design for CFET-based RF device is determined, which resulted in and fT and fMax improvements by 3.74 times and 8.44 times, respectively.",

author = "Chang, \{Shu Wei\} and Chou, \{Jia Hon\} and Lee, \{Wen Hsi\} and Lee, \{Yao Jen\} and Lu, \{Darsen D.\}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2023",

month = mar,

doi = "10.1016/j.sse.2022.108585",

language = "English",

volume = "201",

journal = "Solid-State Electronics",

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T1 - TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET

AU - Chang, Shu Wei

AU - Chou, Jia Hon

AU - Lee, Wen Hsi

AU - Lee, Yao Jen

AU - Lu, Darsen D.

PY - 2023/3

Y1 - 2023/3

N2 - Radio frequency devices based on the state-of-the-art gate-all-around (GAA) nanosheet CFET process suffer from extra parasitic capacitance due to the stacked architecture compared to planar or FinFET devices. In this study, we first calibrate the TCAD process simulation model to experimental data. Subsequently, the model is applied to the simulation of RF characteristics of CFET devices with similar design as our real devices. Subsequently, the influence of various design parameters of the CFET structure are investigated, with emphasis on high frequency characteristics. The optimal design for CFET-based RF device is determined, which resulted in and fT and fMax improvements by 3.74 times and 8.44 times, respectively.

AB - Radio frequency devices based on the state-of-the-art gate-all-around (GAA) nanosheet CFET process suffer from extra parasitic capacitance due to the stacked architecture compared to planar or FinFET devices. In this study, we first calibrate the TCAD process simulation model to experimental data. Subsequently, the model is applied to the simulation of RF characteristics of CFET devices with similar design as our real devices. Subsequently, the influence of various design parameters of the CFET structure are investigated, with emphasis on high frequency characteristics. The optimal design for CFET-based RF device is determined, which resulted in and fT and fMax improvements by 3.74 times and 8.44 times, respectively.

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DO - 10.1016/j.sse.2022.108585

M3 - Article

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VL - 201

JO - Solid-State Electronics

JF - Solid-State Electronics

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TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET

Abstract

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