Technology Development: for InSb Infrared Imagers

Ching Yeu Wei; E. A. Taft; Martin D. Gibbons; Kang L. Wang; John M. Swab; William E. Davern; Dale M. Brown

doi:10.1109/T-ED.1980.19836

Technology Development: for InSb Infrared Imagers

Ching Yeu Wei, E. A. Taft, Martin D. Gibbons, Kang L. Wang, John M. Swab, William E. Davern, Dale M. Brown

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010 cm-2 · eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity (R). The average D* of a 64-element line array was measured to be 3.4 × 1011 cm · Hz1/2 · W-1 which is 70 percent of that of “background-limited-performance” (BLIP) operation. The R was 1 × 10-5 V/photon with 10-percent uniformity. The D* and R were also obtained for a 32 × 32 2D array.

Original language	English
Pages (from-to)	170-175
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	27
Issue number	1
DOIs	https://doi.org/10.1109/T-ED.1980.19836
Publication status	Published - 1980 Jan

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/T-ED.1980.19836

Cite this

@article{326c6c4d718e41cb889d92ad0c7a229c,

title = "Technology Development: for InSb Infrared Imagers",

abstract = "InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010 cm-2 · eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity (R). The average D* of a 64-element line array was measured to be 3.4 × 1011 cm · Hz1/2 · W-1 which is 70 percent of that of “background-limited-performance” (BLIP) operation. The R was 1 × 10-5 V/photon with 10-percent uniformity. The D* and R were also obtained for a 32 × 32 2D array.",

author = "Wei, {Ching Yeu} and Taft, {E. A.} and Gibbons, {Martin D.} and Wang, {Kang L.} and Swab, {John M.} and Davern, {William E.} and Brown, {Dale M.}",

year = "1980",

month = jan,

doi = "10.1109/T-ED.1980.19836",

language = "English",

volume = "27",

pages = "170--175",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Technology Development

T2 - for InSb Infrared Imagers

AU - Wei, Ching Yeu

AU - Taft, E. A.

AU - Gibbons, Martin D.

AU - Wang, Kang L.

AU - Swab, John M.

AU - Davern, William E.

AU - Brown, Dale M.

PY - 1980/1

Y1 - 1980/1

N2 - InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010 cm-2 · eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity (R). The average D* of a 64-element line array was measured to be 3.4 × 1011 cm · Hz1/2 · W-1 which is 70 percent of that of “background-limited-performance” (BLIP) operation. The R was 1 × 10-5 V/photon with 10-percent uniformity. The D* and R were also obtained for a 32 × 32 2D array.

AB - InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010 cm-2 · eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity (R). The average D* of a 64-element line array was measured to be 3.4 × 1011 cm · Hz1/2 · W-1 which is 70 percent of that of “background-limited-performance” (BLIP) operation. The R was 1 × 10-5 V/photon with 10-percent uniformity. The D* and R were also obtained for a 32 × 32 2D array.

UR - http://www.scopus.com/inward/record.url?scp=0018925252&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018925252&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1980.19836

DO - 10.1109/T-ED.1980.19836

M3 - Article

AN - SCOPUS:0018925252

SN - 0018-9383

VL - 27

SP - 170

EP - 175

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

Technology Development: for InSb Infrared Imagers

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this