Technology Development: for InSb Infrared Imagers

Ching Yeu Wei, E. A. Taft, Martin D. Gibbons, Kang L. Wang, John M. Swab, William E. Davern, Dale M. Brown

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010 cm-2 · eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity (R). The average D* of a 64-element line array was measured to be 3.4 × 1011 cm · Hz1/2 · W-1 which is 70 percent of that of “background-limited-performance” (BLIP) operation. The R was 1 × 10-5 V/photon with 10-percent uniformity. The D* and R were also obtained for a 32 × 32 2D array.

Original languageEnglish
Pages (from-to)170-175
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number1
Publication statusPublished - 1980 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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