TEM measurement of strain in coherent quantum heterostructures

Peter D. Miller, Chuan Pu Liu, J. Murray Gibson

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

We report on a transmission electron microscopy (TEM) technique that can be used to measure strain due to individual nanometer-scale coherent heterostructures such as quantum dots or inclusions. The measurement relies on two-beam imaging and on an approximation that employs a universal model for lattice plane bending. We demonstrate that analysis is simple and accurate. Using this method, we measured the average strain in dome-shaped Ge islands grown on Si (001). We found that the method of specimen preparation can significantly affect the observed strain in these islands.

Original languageEnglish
Pages (from-to)225-233
Number of pages9
JournalUltramicroscopy
Volume84
Issue number3-4
DOIs
Publication statusPublished - 2000 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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