TEM measurement of strain in coherent quantum heterostructures

Peter D. Miller, Chuan-Pu Liu, J. Murray Gibson

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We report on a transmission electron microscopy (TEM) technique that can be used to measure strain due to individual nanometer-scale coherent heterostructures such as quantum dots or inclusions. The measurement relies on two-beam imaging and on an approximation that employs a universal model for lattice plane bending. We demonstrate that analysis is simple and accurate. Using this method, we measured the average strain in dome-shaped Ge islands grown on Si (001). We found that the method of specimen preparation can significantly affect the observed strain in these islands.

Original languageEnglish
Pages (from-to)225-233
Number of pages9
JournalUltramicroscopy
Volume84
Issue number3-4
DOIs
Publication statusPublished - 2000 Jan 1

Fingerprint

Heterojunctions
Transmission electron microscopy
transmission electron microscopy
domes
Specimen preparation
quantum dots
Domes
inclusions
preparation
Semiconductor quantum dots
approximation
Imaging techniques

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

Cite this

Miller, Peter D. ; Liu, Chuan-Pu ; Murray Gibson, J. / TEM measurement of strain in coherent quantum heterostructures. In: Ultramicroscopy. 2000 ; Vol. 84, No. 3-4. pp. 225-233.
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TEM measurement of strain in coherent quantum heterostructures. / Miller, Peter D.; Liu, Chuan-Pu; Murray Gibson, J.

In: Ultramicroscopy, Vol. 84, No. 3-4, 01.01.2000, p. 225-233.

Research output: Contribution to journalArticle

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