Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways

Riley E. Brandt; Niall M. Mangan; Jian V. Li; Rachel C. Kurchin; Timothy Milakovich; Sergiu Levcenco; Eugene A. Fitzgerald; Thomas Unold; Tonio Buonassisi

doi:10.1109/PVSC.2016.7749978

Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways

Riley E. Brandt, Niall M. Mangan, Jian V. Li, Rachel C. Kurchin, Timothy Milakovich, Sergiu Levcenco, Eugene A. Fitzgerald, Thomas Unold, Tonio Buonassisi

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In novel photovoltaic absorbers, it is often difficult to assess the root causes of low open-circuit voltages, which may be due to bulk recombination or sub-optimal contacts. In the present work, we discuss the role of temperature- and illumination-dependent device electrical measurements in quantifying and distinguishing these performance losses - in particular, for determining bounds on interface recombination velocities, band alignment, and minority carrier lifetime. We assess the accuracy of this approach by direct comparison to photoelectron spectroscopy. Then, we demonstrate how more computationally intensive model parameter fitting approaches can draw more insights from this broad measurement space. We apply this measurement and modeling approach to high-performance III-V and thin-film chalcogenide devices.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1997-2001
Number of pages	5
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749978
Publication status	Published - 2016 Nov 18
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 2016 Jun 5 → 2016 Jun 10

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	16-06-05 → 16-06-10

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7749978

Cite this

Brandt, R. E., Mangan, N. M., Li, J. V., Kurchin, R. C., Milakovich, T., Levcenco, S., Fitzgerald, E. A., Unold, T., & Buonassisi, T. (2016). Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 1997-2001). [7749978] (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749978

Brandt, Riley E. ; Mangan, Niall M. ; Li, Jian V. ; Kurchin, Rachel C. ; Milakovich, Timothy ; Levcenco, Sergiu ; Fitzgerald, Eugene A. ; Unold, Thomas ; Buonassisi, Tonio. / Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1997-2001 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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title = "Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways",

abstract = "In novel photovoltaic absorbers, it is often difficult to assess the root causes of low open-circuit voltages, which may be due to bulk recombination or sub-optimal contacts. In the present work, we discuss the role of temperature- and illumination-dependent device electrical measurements in quantifying and distinguishing these performance losses - in particular, for determining bounds on interface recombination velocities, band alignment, and minority carrier lifetime. We assess the accuracy of this approach by direct comparison to photoelectron spectroscopy. Then, we demonstrate how more computationally intensive model parameter fitting approaches can draw more insights from this broad measurement space. We apply this measurement and modeling approach to high-performance III-V and thin-film chalcogenide devices.",

author = "Brandt, {Riley E.} and Mangan, {Niall M.} and Li, {Jian V.} and Kurchin, {Rachel C.} and Timothy Milakovich and Sergiu Levcenco and Fitzgerald, {Eugene A.} and Thomas Unold and Tonio Buonassisi",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7749978",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1997--2001",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",

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Brandt, RE, Mangan, NM, Li, JV, Kurchin, RC, Milakovich, T, Levcenco, S, Fitzgerald, EA, Unold, T & Buonassisi, T 2016, Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749978, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 1997-2001, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 16-06-05. https://doi.org/10.1109/PVSC.2016.7749978

Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways. / Brandt, Riley E.; Mangan, Niall M.; Li, Jian V.; Kurchin, Rachel C.; Milakovich, Timothy; Levcenco, Sergiu; Fitzgerald, Eugene A.; Unold, Thomas; Buonassisi, Tonio.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1997-2001 7749978 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways

AU - Brandt, Riley E.

AU - Mangan, Niall M.

AU - Li, Jian V.

AU - Kurchin, Rachel C.

AU - Milakovich, Timothy

AU - Levcenco, Sergiu

AU - Fitzgerald, Eugene A.

AU - Unold, Thomas

AU - Buonassisi, Tonio

PY - 2016/11/18

Y1 - 2016/11/18

N2 - In novel photovoltaic absorbers, it is often difficult to assess the root causes of low open-circuit voltages, which may be due to bulk recombination or sub-optimal contacts. In the present work, we discuss the role of temperature- and illumination-dependent device electrical measurements in quantifying and distinguishing these performance losses - in particular, for determining bounds on interface recombination velocities, band alignment, and minority carrier lifetime. We assess the accuracy of this approach by direct comparison to photoelectron spectroscopy. Then, we demonstrate how more computationally intensive model parameter fitting approaches can draw more insights from this broad measurement space. We apply this measurement and modeling approach to high-performance III-V and thin-film chalcogenide devices.

AB - In novel photovoltaic absorbers, it is often difficult to assess the root causes of low open-circuit voltages, which may be due to bulk recombination or sub-optimal contacts. In the present work, we discuss the role of temperature- and illumination-dependent device electrical measurements in quantifying and distinguishing these performance losses - in particular, for determining bounds on interface recombination velocities, band alignment, and minority carrier lifetime. We assess the accuracy of this approach by direct comparison to photoelectron spectroscopy. Then, we demonstrate how more computationally intensive model parameter fitting approaches can draw more insights from this broad measurement space. We apply this measurement and modeling approach to high-performance III-V and thin-film chalcogenide devices.

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BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 5 June 2016 through 10 June 2016

ER -

Brandt RE, Mangan NM, Li JV, Kurchin RC, Milakovich T, Levcenco S et al. Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1997-2001. 7749978. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2016.7749978

Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways

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