TY - GEN
T1 - Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways
AU - Brandt, Riley E.
AU - Mangan, Niall M.
AU - Li, Jian V.
AU - Kurchin, Rachel C.
AU - Milakovich, Timothy
AU - Levcenco, Sergiu
AU - Fitzgerald, Eugene A.
AU - Unold, Thomas
AU - Buonassisi, Tonio
N1 - Funding Information:
This work was supported as part of the Center for Next Generation Materials by Design (CMGMD), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences. The authors thank Chris Roat and Marc Berndl (Google) for helpful advice and scientific discussions surrounding inference
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - In novel photovoltaic absorbers, it is often difficult to assess the root causes of low open-circuit voltages, which may be due to bulk recombination or sub-optimal contacts. In the present work, we discuss the role of temperature- and illumination-dependent device electrical measurements in quantifying and distinguishing these per form ance losses - in particular, for determining bounds on interface recombination velocities, band alignment, and minority carrier lifetime. We assess the accuracy of this approach by direct comparison to photoelectron spectroscopy. Then, we demonstrate how more computationally intensive model parameter fitting approaches can draw more insights from this broad measurement space. We apply this measurement and modeling approach to high- performance III-V and thin-film chalcogenide devices.
AB - In novel photovoltaic absorbers, it is often difficult to assess the root causes of low open-circuit voltages, which may be due to bulk recombination or sub-optimal contacts. In the present work, we discuss the role of temperature- and illumination-dependent device electrical measurements in quantifying and distinguishing these per form ance losses - in particular, for determining bounds on interface recombination velocities, band alignment, and minority carrier lifetime. We assess the accuracy of this approach by direct comparison to photoelectron spectroscopy. Then, we demonstrate how more computationally intensive model parameter fitting approaches can draw more insights from this broad measurement space. We apply this measurement and modeling approach to high- performance III-V and thin-film chalcogenide devices.
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U2 - 10.1109/PVSC.2017.8366447
DO - 10.1109/PVSC.2017.8366447
M3 - Conference contribution
AN - SCOPUS:85048484742
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 893
EP - 895
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -