Temperature-based phase change memory model for pulsing scheme assessment

Yi Bo Liao, Jun Tin Lin, Meng-Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

23 Citations (Scopus)

Abstract

A physical yet analytical phase change memory (PCM) model simultaneously accounting for thermal and electrical conductivities is presented. Due to the physics based nature of the model, the essential temperature from heating and cooling of PCM during operation is instantaneously updated. More importantly, the model can be applied to non-conventional circuit design technique. We show that for the first time the input current pulsing scheme for PCM programming can be significantly simplified via the unique intrinsic thermal memory effect. The model is implemented In HSPICE using Verilog-A, which is flexible and portable for different circuit simulators. As PCM technology is emerging, the predictive compact model can expedite the novel technology development.

Original languageEnglish
Title of host publicationProceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
Pages199-202
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 22
EventIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 - Minatec Grenoble, France
Duration: 2008 Jun 22008 Jun 4

Publication series

NameProceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Other

OtherIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008
CountryFrance
CityMinatec Grenoble
Period08-06-0208-06-04

Fingerprint

Phase change memory
Temperature
Computer hardware description languages
Networks (circuits)
Thermal conductivity
Physics
Simulators
Cooling
Heating
Data storage equipment

All Science Journal Classification (ASJC) codes

  • Human-Computer Interaction
  • Electrical and Electronic Engineering

Cite this

Liao, Y. B., Lin, J. T., & Chiang, M-H. (2008). Temperature-based phase change memory model for pulsing scheme assessment. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 199-202). [4567278] (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). https://doi.org/10.1109/ICICDT.2008.4567278
Liao, Yi Bo ; Lin, Jun Tin ; Chiang, Meng-Hsueh. / Temperature-based phase change memory model for pulsing scheme assessment. Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. pp. 199-202 (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT).
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Liao, YB, Lin, JT & Chiang, M-H 2008, Temperature-based phase change memory model for pulsing scheme assessment. in Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT., 4567278, Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, pp. 199-202, IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008, Minatec Grenoble, France, 08-06-02. https://doi.org/10.1109/ICICDT.2008.4567278

Temperature-based phase change memory model for pulsing scheme assessment. / Liao, Yi Bo; Lin, Jun Tin; Chiang, Meng-Hsueh.

Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. p. 199-202 4567278 (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Liao YB, Lin JT, Chiang M-H. Temperature-based phase change memory model for pulsing scheme assessment. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. p. 199-202. 4567278. (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). https://doi.org/10.1109/ICICDT.2008.4567278