Temperature-based phase change memory model for pulsing scheme assessment

Yi Bo Liao; Jun Tin Lin; Meng Hsueh Chiang

doi:10.1109/ICICDT.2008.4567278

Temperature-based phase change memory model for pulsing scheme assessment

Yi Bo Liao, Jun Tin Lin, Meng Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

26 Citations (Scopus)

Abstract

A physical yet analytical phase change memory (PCM) model simultaneously accounting for thermal and electrical conductivities is presented. Due to the physics based nature of the model, the essential temperature from heating and cooling of PCM during operation is instantaneously updated. More importantly, the model can be applied to non-conventional circuit design technique. We show that for the first time the input current pulsing scheme for PCM programming can be significantly simplified via the unique intrinsic thermal memory effect. The model is implemented In HSPICE using Verilog-A, which is flexible and portable for different circuit simulators. As PCM technology is emerging, the predictive compact model can expedite the novel technology development.

Original language	English
Title of host publication	Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
Pages	199-202
Number of pages	4
DOIs	https://doi.org/10.1109/ICICDT.2008.4567278
Publication status	Published - 2008
Event	IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 - Minatec Grenoble, France Duration: 2008 Jun 2 → 2008 Jun 4

Publication series

Name	Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Other

Other	IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008
Country/Territory	France
City	Minatec Grenoble
Period	08-06-02 → 08-06-04

All Science Journal Classification (ASJC) codes

Human-Computer Interaction
Electrical and Electronic Engineering

Access to Document

10.1109/ICICDT.2008.4567278

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Liao, Y. B., Lin, J. T., & Chiang, M. H. (2008). Temperature-based phase change memory model for pulsing scheme assessment. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 199-202). [4567278] (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). https://doi.org/10.1109/ICICDT.2008.4567278

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title = "Temperature-based phase change memory model for pulsing scheme assessment",

abstract = "A physical yet analytical phase change memory (PCM) model simultaneously accounting for thermal and electrical conductivities is presented. Due to the physics based nature of the model, the essential temperature from heating and cooling of PCM during operation is instantaneously updated. More importantly, the model can be applied to non-conventional circuit design technique. We show that for the first time the input current pulsing scheme for PCM programming can be significantly simplified via the unique intrinsic thermal memory effect. The model is implemented In HSPICE using Verilog-A, which is flexible and portable for different circuit simulators. As PCM technology is emerging, the predictive compact model can expedite the novel technology development.",

author = "Liao, {Yi Bo} and Lin, {Jun Tin} and Chiang, {Meng Hsueh}",

year = "2008",

doi = "10.1109/ICICDT.2008.4567278",

language = "English",

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series = "Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT",

pages = "199--202",

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note = "IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 ; Conference date: 02-06-2008 Through 04-06-2008",

}

Liao, YB, Lin, JT & Chiang, MH 2008, Temperature-based phase change memory model for pulsing scheme assessment. in Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT., 4567278, Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, pp. 199-202, IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008, Minatec Grenoble, France, 08-06-02. https://doi.org/10.1109/ICICDT.2008.4567278

Temperature-based phase change memory model for pulsing scheme assessment. / Liao, Yi Bo; Lin, Jun Tin; Chiang, Meng Hsueh.
Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. p. 199-202 4567278 (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - A physical yet analytical phase change memory (PCM) model simultaneously accounting for thermal and electrical conductivities is presented. Due to the physics based nature of the model, the essential temperature from heating and cooling of PCM during operation is instantaneously updated. More importantly, the model can be applied to non-conventional circuit design technique. We show that for the first time the input current pulsing scheme for PCM programming can be significantly simplified via the unique intrinsic thermal memory effect. The model is implemented In HSPICE using Verilog-A, which is flexible and portable for different circuit simulators. As PCM technology is emerging, the predictive compact model can expedite the novel technology development.

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BT - Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

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Liao YB, Lin JT, Chiang MH. Temperature-based phase change memory model for pulsing scheme assessment. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. p. 199-202. 4567278. (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). doi: 10.1109/ICICDT.2008.4567278

Temperature-based phase change memory model for pulsing scheme assessment

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