Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor

K. W. Chang, Jih-Jen Wu

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Catalytic growth of 1-D GaN nanostructures is achieved at temperatures from 550 to 850 °C using NH3 and gallium acetylacetonate. Structural characterization of the 1-D GaN nanostructures by HRTEM shows that straight GaN nanowires, needle-like nanowires (nanoneedles), and bamboo-shoot-like nanoneedles are synthesized at 750, 650, and 550 °C, respectively. In addition to selecting a proper catalyst, providing sufficient precursors has been demonstrated to be a crucial factor for the low-temperature growth of 1-D GaN nanostructures via the VLS mechanism. Possible mechanisms for forming nanoneedles at low temperatures are proposed.

Original languageEnglish
Pages (from-to)769-774
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume77
Issue number6
DOIs
Publication statusPublished - 2003 Nov 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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