Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/In xGa 1-xAs/GaAs pseudomorphic high electron mobility transistor

Wen Chau Liu, Wen Lung Chang, Wen Shiung Lour, Kuo Hui Yu, Kun Wei Lin, Chin Chuan Cheng, Shiou Ying Cheng

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A newly designed inverted delta-doped V-shaped GaInP/In xGa 1-xAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been successfully fabricated and studied. For a 1 × 100 μm 2 device, a high gate-to-drain breakdown voltage over 30 V at 300 K is found. In addition, a maximum transconductance of 201 mS/mm with a broad operation regime for 3 V of gate bias (565 mA/mm of drain current density), a very high output drain saturation current density of 826 mA/mm, and a high DC gain ratio of 575 are obtained. Furthermore, good temperature-dependent performances at the operating temperature ranging from 300 to 450 K are found. The unity current gain cutoff frequency f T and maximum oscillation frequency f max up to 16 and 34 GHz are obtained, respectively. Meanwhile, the studied device shows the significantly wide and flat gate bias operation regime (3 V) for microwave performances.

Original languageEnglish
Pages (from-to)1290-1296
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume48
Issue number7
DOIs
Publication statusPublished - 2001 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/In <sub>x</sub>Ga <sub>1-x</sub>As/GaAs pseudomorphic high electron mobility transistor'. Together they form a unique fingerprint.

  • Cite this