TY - JOUR
T1 - Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/In xGa 1-xAs/GaAs pseudomorphic high electron mobility transistor
AU - Liu, Wen Chau
AU - Chang, Wen Lung
AU - Lour, Wen Shiung
AU - Yu, Kuo Hui
AU - Lin, Kun Wei
AU - Cheng, Chin Chuan
AU - Cheng, Shiou Ying
N1 - Funding Information:
Manuscript received November 20, 2000; revised December 4, 2000. This work was supported by the National Science Council of the R.O.C. under Contract NSC 89-2215-E-006-012. The review of this paper was arranged by Editor A. S. Brown. W.-C. Liu, W.-L. Chang, K.-H. Yu, K.-W. Lin, and C.-C. Cheng are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, R.O.C. (e-mail: [email protected]). W.-S. Lour is with the Department of Electrical Engineering, National Taiwan-Ocean University, Keelung, Taiwan, R.O.C. S.-Y. Cheng is with the Department of Electrical Engineering, Oriental Institute of Technology, Taipei, Taiwan, R.O.C. Publisher Item Identifier S 0018-9383(01)05315-1.
PY - 2001/7
Y1 - 2001/7
N2 - A newly designed inverted delta-doped V-shaped GaInP/In xGa 1-xAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been successfully fabricated and studied. For a 1 × 100 μm 2 device, a high gate-to-drain breakdown voltage over 30 V at 300 K is found. In addition, a maximum transconductance of 201 mS/mm with a broad operation regime for 3 V of gate bias (565 mA/mm of drain current density), a very high output drain saturation current density of 826 mA/mm, and a high DC gain ratio of 575 are obtained. Furthermore, good temperature-dependent performances at the operating temperature ranging from 300 to 450 K are found. The unity current gain cutoff frequency f T and maximum oscillation frequency f max up to 16 and 34 GHz are obtained, respectively. Meanwhile, the studied device shows the significantly wide and flat gate bias operation regime (3 V) for microwave performances.
AB - A newly designed inverted delta-doped V-shaped GaInP/In xGa 1-xAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been successfully fabricated and studied. For a 1 × 100 μm 2 device, a high gate-to-drain breakdown voltage over 30 V at 300 K is found. In addition, a maximum transconductance of 201 mS/mm with a broad operation regime for 3 V of gate bias (565 mA/mm of drain current density), a very high output drain saturation current density of 826 mA/mm, and a high DC gain ratio of 575 are obtained. Furthermore, good temperature-dependent performances at the operating temperature ranging from 300 to 450 K are found. The unity current gain cutoff frequency f T and maximum oscillation frequency f max up to 16 and 34 GHz are obtained, respectively. Meanwhile, the studied device shows the significantly wide and flat gate bias operation regime (3 V) for microwave performances.
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U2 - 10.1109/16.930641
DO - 10.1109/16.930641
M3 - Article
AN - SCOPUS:0035396476
SN - 0018-9383
VL - 48
SP - 1290
EP - 1296
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 7
ER -