Temperature dependence of electrical characteristics of strained nMOSFETs using stress memorization technique

Po Chin Huang, San Lein Wu, Shoou Jinn Chang, Cheng Wen Kuo, Ching Yao Chang, Yao Tsung Huang, Yao Chin Cheng, Osbert Cheng

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The temperature dependence of the electrical characteristics of strained nMOSFETs combining stress memorization technique (SMT) process and contact etch-stop layer has been investigated. The observed higher mobility and lower gate tunneling current of SMT devices indicate higher tensile stress in the channel and prove the true transmission of SMT-process-induced stress from the deposited SiN layer. Moreover, as temperature is increased, SMT devices show less deteriorated mobility and increased gate tunneling current, which are due to decreased phonon scattering and increased tunneling barrier height, respectively.

Original languageEnglish
Article number5770179
Pages (from-to)835-837
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number7
DOIs
Publication statusPublished - 2011 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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