Temperature dependence of gate current and breakdown behaviors in an n⁺-GaAs/p⁺-InGaP/n^--GaAs high-barrier gate field-effect transistor

The temperature dependence of gate current and breakdown behavior in an n⁺-GaAs/p⁺-InGaP/n^--GaAs high-barrier gate field-effect transistor has been studied and demonstrated. Due to the presence of an n⁺-GaAs/p⁺-InGaP/n^--GaAs high-barrier gate structure, the device shows high-breakdown characteristics. In addition, we found that the off-state breakdown voltage BV_DS is dominated by channel and gate breakdowns at T = 300 to 420 K, and gate current I_G comes mainly from the tunneling mechanism within this temperature range. However, as the temperature is increased above 420 K, the I_G is seriously affected by the substrate leakage current and BV_DS is only dominated by gate breakdown.