Temperature dependence of gate current and breakdown behaviors in an n+-GaAs/p+-InGaP/n--GaAs high-barrier gate field-effect transistor

Kuo Hui Yu, Kun Wei Lin, Chin Chuan Cheng, Wen Lung Chang, Jung Hui Tsai, Shiou Ying Cheng, Wen Chau Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The temperature dependence of gate current and breakdown behavior in an n+-GaAs/p+-InGaP/n--GaAs high-barrier gate field-effect transistor has been studied and demonstrated. Due to the presence of an n+-GaAs/p+-InGaP/n--GaAs high-barrier gate structure, the device shows high-breakdown characteristics. In addition, we found that the off-state breakdown voltage BVDS is dominated by channel and gate breakdowns at T = 300 to 420 K, and gate current IG comes mainly from the tunneling mechanism within this temperature range. However, as the temperature is increased above 420 K, the IG is seriously affected by the substrate leakage current and BVDS is only dominated by gate breakdown.

Original languageEnglish
Pages (from-to)24-27
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number1
DOIs
Publication statusPublished - 2001 Jan

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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