Temperature dependence of low-frequency noise characteristics in uniaxial tensile strained nMOSFETs

Po Chin Huang, Ching Yao Chang, Osbert Cheng, San Lein Wu, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In this paper, we report on the low-frequency (1/f) noise characteristics of uniaxial tensile-strained nMOSFETs operated at high temperatures. We observed a small temperature sensitivity of 1/f noise in strained nMOSFETs. This can be attributed to the reduced tunneling attenuation length, suppressed phonon scattering, and increased mobility, which result from the strain-increased band splitting between the low-energy ?2 valleys and high-energy ?4 valleys. In addition, regardless of temperature, we found that the dominant mechanism of 1/f noise can be appropriately interpreted using the unified model, which incorporates both the carrier fluctuation and the correlated mobility fluctuation.

Original languageEnglish
Article number100301
JournalJapanese Journal of Applied Physics
Volume54
Issue number10
DOIs
Publication statusPublished - 2015 Oct 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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