In this paper, we report on the low-frequency (1/f) noise characteristics of uniaxial tensile-strained nMOSFETs operated at high temperatures. We observed a small temperature sensitivity of 1/f noise in strained nMOSFETs. This can be attributed to the reduced tunneling attenuation length, suppressed phonon scattering, and increased mobility, which result from the strain-increased band splitting between the low-energy ?2 valleys and high-energy ?4 valleys. In addition, regardless of temperature, we found that the dominant mechanism of 1/f noise can be appropriately interpreted using the unified model, which incorporates both the carrier fluctuation and the correlated mobility fluctuation.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)