TY - JOUR
T1 - Temperature dependence of low-frequency noise characteristics in uniaxial tensile strained nMOSFETs
AU - Huang, Po Chin
AU - Chang, Ching Yao
AU - Cheng, Osbert
AU - Wu, San Lein
AU - Chang, Shoou Jinn
N1 - Funding Information:
This project was supported by the National Natural Science Foundation of China (No. 21475123). Chinese Academy of Sciences Visiting Professorships for Senior International Scientists (No. 2013T2G0024), and the Chinese Academy of Sciences (CAS) ? the Academy of Sciences for the Developing World (TWAS) President's Fellowship Programme (2013-053).
Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/10/1
Y1 - 2015/10/1
N2 - In this paper, we report on the low-frequency (1/f) noise characteristics of uniaxial tensile-strained nMOSFETs operated at high temperatures. We observed a small temperature sensitivity of 1/f noise in strained nMOSFETs. This can be attributed to the reduced tunneling attenuation length, suppressed phonon scattering, and increased mobility, which result from the strain-increased band splitting between the low-energy ?2 valleys and high-energy ?4 valleys. In addition, regardless of temperature, we found that the dominant mechanism of 1/f noise can be appropriately interpreted using the unified model, which incorporates both the carrier fluctuation and the correlated mobility fluctuation.
AB - In this paper, we report on the low-frequency (1/f) noise characteristics of uniaxial tensile-strained nMOSFETs operated at high temperatures. We observed a small temperature sensitivity of 1/f noise in strained nMOSFETs. This can be attributed to the reduced tunneling attenuation length, suppressed phonon scattering, and increased mobility, which result from the strain-increased band splitting between the low-energy ?2 valleys and high-energy ?4 valleys. In addition, regardless of temperature, we found that the dominant mechanism of 1/f noise can be appropriately interpreted using the unified model, which incorporates both the carrier fluctuation and the correlated mobility fluctuation.
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U2 - 10.7567/JJAP.54.100301
DO - 10.7567/JJAP.54.100301
M3 - Article
AN - SCOPUS:84943339024
SN - 0021-4922
VL - 54
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 10
M1 - 100301
ER -