Temperature dependence of the optical properties on GaInNP

S. H. Hsu, Y. K. Su, S. J. Chang, K. I. Lin, W. H. Lan, P. S. Wu, C. H. Wu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report a detailed study of the localized carrier effect and optical characterization of the novel dilute-nitride GaInNP films. These films were grown by metal-organic vapor phase epitaxy on GaAs (100) substrates. These epitaxial layers were then characterized by a high-resolution X-ray rocking curve (XRC) and photoluminescence (PL) spectra. With nitrogen incorporation, the PL peak red shifts, indicating bandgap reduction, and the line width broadening increases due to the increase of non-radiative centers. The S-shape in temperature dependence of the PL spectra shows a considerable number of carriers detrap from localized states to higher bound exciton states as the increasing temperature. The PR spectrum is used to confirm the nitrogen induced localization. Furthermore, this localization phenomenon observed in low-temperature PL no longer exists after RTA process. This result suggests that the crystal quality is improved significantly by thermal treatment.

Original languageEnglish
Pages (from-to)765-771
Number of pages7
JournalJournal of Crystal Growth
Volume272
Issue number1-4 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Dec 10

Fingerprint

Photoluminescence
Optical properties
photoluminescence
optical properties
temperature dependence
Nitrogen
nitrogen
Temperature
Vapor phase epitaxy
Rapid thermal annealing
Epitaxial layers
vapor phase epitaxy
Excitons
Nitrides
red shift
Linewidth
nitrides
Energy gap
Metals
Heat treatment

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Hsu, S. H. ; Su, Y. K. ; Chang, S. J. ; Lin, K. I. ; Lan, W. H. ; Wu, P. S. ; Wu, C. H. / Temperature dependence of the optical properties on GaInNP. In: Journal of Crystal Growth. 2004 ; Vol. 272, No. 1-4 SPEC. ISS. pp. 765-771.
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Temperature dependence of the optical properties on GaInNP. / Hsu, S. H.; Su, Y. K.; Chang, S. J.; Lin, K. I.; Lan, W. H.; Wu, P. S.; Wu, C. H.

In: Journal of Crystal Growth, Vol. 272, No. 1-4 SPEC. ISS., 10.12.2004, p. 765-771.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Temperature dependence of the optical properties on GaInNP

AU - Hsu, S. H.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Lin, K. I.

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AU - Wu, P. S.

AU - Wu, C. H.

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AB - We report a detailed study of the localized carrier effect and optical characterization of the novel dilute-nitride GaInNP films. These films were grown by metal-organic vapor phase epitaxy on GaAs (100) substrates. These epitaxial layers were then characterized by a high-resolution X-ray rocking curve (XRC) and photoluminescence (PL) spectra. With nitrogen incorporation, the PL peak red shifts, indicating bandgap reduction, and the line width broadening increases due to the increase of non-radiative centers. The S-shape in temperature dependence of the PL spectra shows a considerable number of carriers detrap from localized states to higher bound exciton states as the increasing temperature. The PR spectrum is used to confirm the nitrogen induced localization. Furthermore, this localization phenomenon observed in low-temperature PL no longer exists after RTA process. This result suggests that the crystal quality is improved significantly by thermal treatment.

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