Temperature dependences of an In0.46Ga0.54As/In 0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)

Chun Wei Chen, Po Hsien Lai, Wen Shiung Lour, Der Feng Guo, Jung Hui Tsai, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


In this paper, an interesting thermally stable In0.42Al 0.58As/In0.46Ga0.54As metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. Good dc and RF characteristics are obtained by precisely depositing gold (Au) upon the In0.42Al0.58As barrier layer as the Schottky contact metal. For a MHEMT with gate dimensions of 1 × 100 νm2, high gate-drain breakdown voltage, high turn-on voltage, low gate leakage current density, high maximum transconductance with broad operating regime and low output conductance are obtained even at ambient temperatures up to 510 K (240 °C). The studied device also shows a very good microwave performance at room temperature. Moreover, the relatively low variations of the device performance are achieved over a wide temperature range (from 300 to 510 K). Therefore, the studied device has a good thermally stable performance that is suitable for high-speed and high-power electronic applications.

Original languageEnglish
Article number024
Pages (from-to)1358-1363
Number of pages6
JournalSemiconductor Science and Technology
Issue number9
Publication statusPublished - 2006 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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