Temperature dependences of an In0.46Ga0.54As/In 0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
- Chun Wei Chen
- , Po Hsien Lai
- , Wen Shiung Lour
- , Der Feng Guo
- , Jung Hui Tsai
- , Wen Chau Liu
Research output: Contribution to journal › Article › peer-review
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