Temperature dependences of an In_0.46Ga_0.54As/In _0.42Al_0.58As based metamorphic high electron mobility transistor (MHEMT)

Chemical Compounds

• Electron Mobility 100%
• Schottky Contact 67%
• Transconductance 64%
• Breakdown Voltage 62%
• Leakage Current 55%
• Conductance 40%
• Microwave 33%
• Dimension 31%
• Current Density 30%
• Voltage 30%
• Ambient Reaction Temperature 23%
• Metal 18%

Physics & Astronomy

• high electron mobility transistors 86%
• temperature dependence 54%
• performance 36%
• transconductance 30%
• barrier layers 30%
• electrical faults 27%
• low voltage 27%
• ambient temperature 27%
• electric contacts 24%
• high voltages 24%
• leakage 23%
• gold 21%
• high speed 21%
• current density 19%
• microwaves 18%
• output 16%
• room temperature 15%
• electronics 14%
• metals 14%
• temperature 8%

Engineering & Materials Science

• High electron mobility transistors 96%
• Temperature 33%
• Transconductance 33%
• Electric breakdown 31%
• Gold 30%
• Leakage currents 29%
• Current density 26%
• Power electronics 26%
• Microwaves 24%
• Metals 17%
• Electric potential 14%