Temperature-dependent ambipolar electrical characteristics of pentacene-based thin-film transistors: The impact of opposite-sign charge carriers

Tsung Jun Ho, Horng-Long Cheng, Liang Yun Chiu, Wei-Yang Chou, Fu-Ching Tang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The temperature-dependent electrical and charge transport characteristics of pentacene-based ambipolar thin-film transistors (TFTs) were investigated at temperatures ranging from 77 K to 300 K. At room temperature (RT), the pentacene-based TFTs exhibit balanced and high charge mobility with electron (μe) and hole (μh) mobilities, both at about 1.6 cm2/V s. However, at lower temperatures, higher switch-on voltage of n-channel operations, almost absent n-channel characteristics, and strong temperature dependence of μe indicated that electrons were more difficult to release from opposite-signed carriers than that of holes. We observed that μe and μh both followed an Arrhenius-type temperature dependence and exhibited two regimes with a transition temperature at approximately 210-230 K. At high temperatures, data were explained by a model in which charge transport was limited by a dual-carrier release and recombination process, which is an electric field-assisted thermal-activated procedure. At T < 210 K, the observed activation energy is in agreement with unipolar pentacene-based TFTs, suggesting a common multiple trapping and release process-dominated mechanism. Different temperature-induced characteristics between n- and p-channel operations are outlined, thereby providing important insights into the complexity of observing efficient electron transport in comparison with the hole of ambipolar TFTs.

Original languageEnglish
Pages (from-to)74-78
Number of pages5
JournalOrganic Electronics
Volume25
DOIs
Publication statusPublished - 2015 Jun 18

Fingerprint

Thin film transistors
Charge carriers
charge carriers
transistors
thin films
Temperature
temperature dependence
electrons
temperature
hole mobility
Charge transfer
switches
transition temperature
trapping
activation energy
Hole mobility
electric fields
pentacene
Electrons
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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title = "Temperature-dependent ambipolar electrical characteristics of pentacene-based thin-film transistors: The impact of opposite-sign charge carriers",
abstract = "The temperature-dependent electrical and charge transport characteristics of pentacene-based ambipolar thin-film transistors (TFTs) were investigated at temperatures ranging from 77 K to 300 K. At room temperature (RT), the pentacene-based TFTs exhibit balanced and high charge mobility with electron (μe) and hole (μh) mobilities, both at about 1.6 cm2/V s. However, at lower temperatures, higher switch-on voltage of n-channel operations, almost absent n-channel characteristics, and strong temperature dependence of μe indicated that electrons were more difficult to release from opposite-signed carriers than that of holes. We observed that μe and μh both followed an Arrhenius-type temperature dependence and exhibited two regimes with a transition temperature at approximately 210-230 K. At high temperatures, data were explained by a model in which charge transport was limited by a dual-carrier release and recombination process, which is an electric field-assisted thermal-activated procedure. At T < 210 K, the observed activation energy is in agreement with unipolar pentacene-based TFTs, suggesting a common multiple trapping and release process-dominated mechanism. Different temperature-induced characteristics between n- and p-channel operations are outlined, thereby providing important insights into the complexity of observing efficient electron transport in comparison with the hole of ambipolar TFTs.",
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Temperature-dependent ambipolar electrical characteristics of pentacene-based thin-film transistors : The impact of opposite-sign charge carriers. / Ho, Tsung Jun; Cheng, Horng-Long; Chiu, Liang Yun; Chou, Wei-Yang; Tang, Fu-Ching.

In: Organic Electronics, Vol. 25, 18.06.2015, p. 74-78.

Research output: Contribution to journalArticle

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AU - Chou, Wei-Yang

AU - Tang, Fu-Ching

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