Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor

Wen-Chau Liu, H. J. Pan, W. C. Wang, C. C. Cheng, S. C. Feng, C. H. Yen, K. W. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the DC performance of conventional InGaAsbased single HBT's, the quaternary In0.53Ga0.34Al0.13As with a wider band gap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and a low output conductance even at high temperature operations. Furthermore, the temperature dependence of current gain and breakdown voltage is studied and demonstrated.

Original languageEnglish
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
EditorsH. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
PublisherIEEE Computer Society
Pages240-243
Number of pages4
ISBN (Electronic)2863322486
ISBN (Print)9782863322482
DOIs
Publication statusPublished - 2000 Jan 1
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: 2000 Sep 112000 Sep 13

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other30th European Solid-State Device Research Conference, ESSDERC 2000
CountryIreland
CityCork
Period00-09-1100-09-13

Fingerprint

Heterojunction bipolar transistors
Electric breakdown
High temperature operations
Energy gap
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Liu, W-C., Pan, H. J., Wang, W. C., Cheng, C. C., Feng, S. C., Yen, C. H., & Lin, K. W. (2000). Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor. In H. Grunbacher, G. M. Crean, W. A. Lane, & F. A. McCabe (Eds.), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 240-243). [1503689] (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2000.194759
Liu, Wen-Chau ; Pan, H. J. ; Wang, W. C. ; Cheng, C. C. ; Feng, S. C. ; Yen, C. H. ; Lin, K. W. / Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor. ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. editor / H. Grunbacher ; Gabriel M. Crean ; W. A. Lane ; Frank A. McCabe. IEEE Computer Society, 2000. pp. 240-243 (European Solid-State Device Research Conference).
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author = "Wen-Chau Liu and Pan, {H. J.} and Wang, {W. C.} and Cheng, {C. C.} and Feng, {S. C.} and Yen, {C. H.} and Lin, {K. W.}",
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Liu, W-C, Pan, HJ, Wang, WC, Cheng, CC, Feng, SC, Yen, CH & Lin, KW 2000, Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor. in H Grunbacher, GM Crean, WA Lane & FA McCabe (eds), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503689, European Solid-State Device Research Conference, IEEE Computer Society, pp. 240-243, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 00-09-11. https://doi.org/10.1109/ESSDERC.2000.194759

Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor. / Liu, Wen-Chau; Pan, H. J.; Wang, W. C.; Cheng, C. C.; Feng, S. C.; Yen, C. H.; Lin, K. W.

ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. ed. / H. Grunbacher; Gabriel M. Crean; W. A. Lane; Frank A. McCabe. IEEE Computer Society, 2000. p. 240-243 1503689 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the DC performance of conventional InGaAsbased single HBT's, the quaternary In0.53Ga0.34Al0.13As with a wider band gap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and a low output conductance even at high temperature operations. Furthermore, the temperature dependence of current gain and breakdown voltage is studied and demonstrated.

AB - In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the DC performance of conventional InGaAsbased single HBT's, the quaternary In0.53Ga0.34Al0.13As with a wider band gap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and a low output conductance even at high temperature operations. Furthermore, the temperature dependence of current gain and breakdown voltage is studied and demonstrated.

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Liu W-C, Pan HJ, Wang WC, Cheng CC, Feng SC, Yen CH et al. Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor. In Grunbacher H, Crean GM, Lane WA, McCabe FA, editors, ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. IEEE Computer Society. 2000. p. 240-243. 1503689. (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2000.194759