@inproceedings{1b7a0b27898e4f52b1cbc4d3d225c048,
title = "Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor",
abstract = "In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the DC performance of conventional InGaAsbased single HBT's, the quaternary In0.53Ga0.34Al0.13As with a wider band gap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and a low output conductance even at high temperature operations. Furthermore, the temperature dependence of current gain and breakdown voltage is studied and demonstrated.",
author = "Liu, {W. C.} and Pan, {H. J.} and Wang, {W. C.} and Cheng, {C. C.} and Feng, {S. C.} and Yen, {C. H.} and Lin, {K. W.}",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",
year = "2000",
doi = "10.1109/ESSDERC.2000.194759",
language = "English",
isbn = "9782863322482",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "240--243",
editor = "H. Grunbacher and Crean, {Gabriel M.} and Lane, {W. A.} and McCabe, {Frank A.}",
booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",
address = "United States",
}