Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor

W. C. Liu, H. J. Pan, W. C. Wang, C. C. Cheng, S. C. Feng, C. H. Yen, K. W. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the DC performance of conventional InGaAsbased single HBT's, the quaternary In0.53Ga0.34Al0.13As with a wider band gap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and a low output conductance even at high temperature operations. Furthermore, the temperature dependence of current gain and breakdown voltage is studied and demonstrated.

Original languageEnglish
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
EditorsH. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
PublisherIEEE Computer Society
Pages240-243
Number of pages4
ISBN (Electronic)2863322486
ISBN (Print)9782863322482
DOIs
Publication statusPublished - 2000
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: 2000 Sep 112000 Sep 13

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other30th European Solid-State Device Research Conference, ESSDERC 2000
Country/TerritoryIreland
CityCork
Period00-09-1100-09-13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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