Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor

W. C. Liu; H. J. Pan; W. C. Wang; C. C. Cheng; S. C. Feng; C. H. Yen; K. W. Lin

doi:10.1109/ESSDERC.2000.194759

Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor

W. C. Liu
, H. J. Pan
, W. C. Wang
, C. C. Cheng
, S. C. Feng
, C. H. Yen
, K. W. Lin

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the DC performance of conventional InGaAsbased single HBT's, the quaternary In_0.53Ga_0.34Al_0.13As with a wider band gap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and a low output conductance even at high temperature operations. Furthermore, the temperature dependence of current gain and breakdown voltage is studied and demonstrated.

Original language	English
Title of host publication	ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Editors	H. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
Publisher	IEEE Computer Society
Pages	240-243
Number of pages	4
ISBN (Electronic)	2863322486
ISBN (Print)	9782863322482
DOIs	https://doi.org/10.1109/ESSDERC.2000.194759
Publication status	Published - 2000
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 2000 Sept 11 → 2000 Sept 13

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	30th European Solid-State Device Research Conference, ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	00-09-11 → 00-09-13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/ESSDERC.2000.194759

Cite this

Liu, W. C., Pan, H. J., Wang, W. C., Cheng, C. C., Feng, S. C., Yen, C. H., & Lin, K. W. (2000). Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor. In H. Grunbacher, G. M. Crean, W. A. Lane, & F. A. McCabe (Eds.), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 240-243). Article 1503689 (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2000.194759

Liu, W. C. ; Pan, H. J. ; Wang, W. C. et al. / Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor. ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. editor / H. Grunbacher ; Gabriel M. Crean ; W. A. Lane ; Frank A. McCabe. IEEE Computer Society, 2000. pp. 240-243 (European Solid-State Device Research Conference).

@inproceedings{1b7a0b27898e4f52b1cbc4d3d225c048,

title = "Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor",

abstract = "In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the DC performance of conventional InGaAsbased single HBT's, the quaternary In0.53Ga0.34Al0.13As with a wider band gap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and a low output conductance even at high temperature operations. Furthermore, the temperature dependence of current gain and breakdown voltage is studied and demonstrated.",

author = "Liu, \{W. C.\} and Pan, \{H. J.\} and Wang, \{W. C.\} and Cheng, \{C. C.\} and Feng, \{S. C.\} and Yen, \{C. H.\} and Lin, \{K. W.\}",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

year = "2000",

doi = "10.1109/ESSDERC.2000.194759",

language = "English",

isbn = "9782863322482",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "240--243",

editor = "H. Grunbacher and Crean, \{Gabriel M.\} and Lane, \{W. A.\} and McCabe, \{Frank A.\}",

booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",

address = "United States",

}

Liu, WC, Pan, HJ, Wang, WC, Cheng, CC, Feng, SC, Yen, CH & Lin, KW 2000, Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor. in H Grunbacher, GM Crean, WA Lane & FA McCabe (eds), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503689, European Solid-State Device Research Conference, IEEE Computer Society, pp. 240-243, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 00-09-11. https://doi.org/10.1109/ESSDERC.2000.194759

Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor. / Liu, W. C.; Pan, H. J.; Wang, W. C. et al.
ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. ed. / H. Grunbacher; Gabriel M. Crean; W. A. Lane; Frank A. McCabe. IEEE Computer Society, 2000. p. 240-243 1503689 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor

AU - Liu, W. C.

AU - Pan, H. J.

AU - Wang, W. C.

AU - Cheng, C. C.

AU - Feng, S. C.

AU - Yen, C. H.

AU - Lin, K. W.

PY - 2000

Y1 - 2000

N2 - In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the DC performance of conventional InGaAsbased single HBT's, the quaternary In0.53Ga0.34Al0.13As with a wider band gap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and a low output conductance even at high temperature operations. Furthermore, the temperature dependence of current gain and breakdown voltage is studied and demonstrated.

AB - In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the DC performance of conventional InGaAsbased single HBT's, the quaternary In0.53Ga0.34Al0.13As with a wider band gap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and a low output conductance even at high temperature operations. Furthermore, the temperature dependence of current gain and breakdown voltage is studied and demonstrated.

UR - https://www.scopus.com/pages/publications/84907859084

UR - https://www.scopus.com/pages/publications/84907859084#tab=citedBy

U2 - 10.1109/ESSDERC.2000.194759

DO - 10.1109/ESSDERC.2000.194759

M3 - Conference contribution

AN - SCOPUS:84907859084

SN - 9782863322482

T3 - European Solid-State Device Research Conference

SP - 240

EP - 243

BT - ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference

A2 - Grunbacher, H.

A2 - Crean, Gabriel M.

A2 - Lane, W. A.

A2 - McCabe, Frank A.

PB - IEEE Computer Society

T2 - 30th European Solid-State Device Research Conference, ESSDERC 2000

Y2 - 11 September 2000 through 13 September 2000

ER -

Liu WC, Pan HJ, Wang WC, Cheng CC, Feng SC, Yen CH et al. Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor. In Grunbacher H, Crean GM, Lane WA, McCabe FA, editors, ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. IEEE Computer Society. 2000. p. 240-243. 1503689. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2000.194759

Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this