Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm

I. Liang Chen; Wei Chou Hsu; Tsin Dong Lee; Ke Hua Su; Chih Hung Chiou; Gray Lin

doi:10.1088/0268-1242/21/7/011

Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm

I. Liang Chen, Wei Chou Hsu, Tsin Dong Lee, Ke Hua Su, Chih Hung Chiou, Gray Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

Continuous-wave operation of highly strained double quantum well vertical-cavity surface-emitting lasers (VCSELs) with active regions of GaInNAs and InGaAs emitting at 1.26 νm at room temperature has been realized by metal organic chemical vapour deposition. The proposed InGaAs VCSEL can operate at high temperatures and exhibits superior temperature stability. The degradation of output power of the 1.26 νm InGaAs VCSEL is approximately 2.8% after a 1000 h burn-in life test.

Original language	English
Article number	011
Pages (from-to)	886-889
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	21
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/21/7/011
Publication status	Published - 2006 Jul 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/21/7/011

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title = "Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm",

abstract = "Continuous-wave operation of highly strained double quantum well vertical-cavity surface-emitting lasers (VCSELs) with active regions of GaInNAs and InGaAs emitting at 1.26 νm at room temperature has been realized by metal organic chemical vapour deposition. The proposed InGaAs VCSEL can operate at high temperatures and exhibits superior temperature stability. The degradation of output power of the 1.26 νm InGaAs VCSEL is approximately 2.8% after a 1000 h burn-in life test.",

author = "Chen, {I. Liang} and Hsu, {Wei Chou} and Lee, {Tsin Dong} and Su, {Ke Hua} and Chiou, {Chih Hung} and Gray Lin",

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doi = "10.1088/0268-1242/21/7/011",

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T1 - Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm

AU - Chen, I. Liang

AU - Hsu, Wei Chou

AU - Lee, Tsin Dong

AU - Su, Ke Hua

AU - Chiou, Chih Hung

AU - Lin, Gray

PY - 2006/7/1

Y1 - 2006/7/1

N2 - Continuous-wave operation of highly strained double quantum well vertical-cavity surface-emitting lasers (VCSELs) with active regions of GaInNAs and InGaAs emitting at 1.26 νm at room temperature has been realized by metal organic chemical vapour deposition. The proposed InGaAs VCSEL can operate at high temperatures and exhibits superior temperature stability. The degradation of output power of the 1.26 νm InGaAs VCSEL is approximately 2.8% after a 1000 h burn-in life test.

AB - Continuous-wave operation of highly strained double quantum well vertical-cavity surface-emitting lasers (VCSELs) with active regions of GaInNAs and InGaAs emitting at 1.26 νm at room temperature has been realized by metal organic chemical vapour deposition. The proposed InGaAs VCSEL can operate at high temperatures and exhibits superior temperature stability. The degradation of output power of the 1.26 νm InGaAs VCSEL is approximately 2.8% after a 1000 h burn-in life test.

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U2 - 10.1088/0268-1242/21/7/011

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SP - 886

EP - 889

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

M1 - 011

ER -

Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm

Abstract

All Science Journal Classification (ASJC) codes

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