Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm

I. Liang Chen, Wei-Chou Hsu, Tsin Dong Lee, Ke Hua Su, Chih Hung Chiou, Gray Lin

Research output: Contribution to journalArticle

Abstract

Continuous-wave operation of highly strained double quantum well vertical-cavity surface-emitting lasers (VCSELs) with active regions of GaInNAs and InGaAs emitting at 1.26 νm at room temperature has been realized by metal organic chemical vapour deposition. The proposed InGaAs VCSEL can operate at high temperatures and exhibits superior temperature stability. The degradation of output power of the 1.26 νm InGaAs VCSEL is approximately 2.8% after a 1000 h burn-in life test.

Original languageEnglish
Article number011
Pages (from-to)886-889
Number of pages4
JournalSemiconductor Science and Technology
Volume21
Issue number7
DOIs
Publication statusPublished - 2006 Jul 1

Fingerprint

burn-in
Surface emitting lasers
surface emitting lasers
Wavelength
cavities
wavelengths
Organic Chemicals
Organic chemicals
Temperature
Semiconductor quantum wells
continuous radiation
metalorganic chemical vapor deposition
temperature
Chemical vapor deposition
Metals
quantum wells
degradation
Degradation
output
room temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm",
abstract = "Continuous-wave operation of highly strained double quantum well vertical-cavity surface-emitting lasers (VCSELs) with active regions of GaInNAs and InGaAs emitting at 1.26 νm at room temperature has been realized by metal organic chemical vapour deposition. The proposed InGaAs VCSEL can operate at high temperatures and exhibits superior temperature stability. The degradation of output power of the 1.26 νm InGaAs VCSEL is approximately 2.8{\%} after a 1000 h burn-in life test.",
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Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm. / Chen, I. Liang; Hsu, Wei-Chou; Lee, Tsin Dong; Su, Ke Hua; Chiou, Chih Hung; Lin, Gray.

In: Semiconductor Science and Technology, Vol. 21, No. 7, 011, 01.07.2006, p. 886-889.

Research output: Contribution to journalArticle

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T1 - Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm

AU - Chen, I. Liang

AU - Hsu, Wei-Chou

AU - Lee, Tsin Dong

AU - Su, Ke Hua

AU - Chiou, Chih Hung

AU - Lin, Gray

PY - 2006/7/1

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