Temperature-dependent characteristics of a low temperature deposition approach on a pseudomorphic high electron mobility transistor

Li Yang Chen; Huey Ing Chen; Shiou Ying Cheng; Tzu Pin Chen; Tsung Han Tsai; Yi Jung Liu; Yi Wen Huang; Chien Chang Huang; Wen Chau Liu

doi:10.1149/1.3110033

Temperature-dependent characteristics of a low temperature deposition approach on a pseudomorphic high electron mobility transistor

Li Yang Chen, Huey Ing Chen, Shiou Ying Cheng, Tzu Pin Chen, Tsung Han Tsai, Yi Jung Liu, Yi Wen Huang, Chien Chang Huang, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

Abstract

The temperature-dependent characteristics of an AlGaAsInGaAsGaAs pseudomorphic high electron mobility transistor (PHEMT) with an electroless plated (EP) deposition approach are studied and demonstrated. Based on the low temperature and low energy deposition, the EP deposition approach can form a better metal-semiconductor interface with the reduction in surface damage. Experimentally, the EP-based device shows a significantly improved dc performance. Good experimental results, including a high Schottky barrier height of 0.831 (0.759) eV, low ideality factor of 1.10 (1.32), high turn-on voltage of 0.75 (0.51) V, low reverse leakage current of 3.9 (161.4) μAmm, improved threshold voltage of -0.43 (-0.61) V, and high maximum transconductance of 225.8 (160.9) mSmm, are obtained at 300 (500) K. Moreover, the EP approach also has the advantages of easy operation and low cost.

Original language	English
Pages (from-to)	H211-H213
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	6
DOIs	https://doi.org/10.1149/1.3110033
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3110033

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@article{f2021b27ff1b4245b08dba7cfdb10d54,

title = "Temperature-dependent characteristics of a low temperature deposition approach on a pseudomorphic high electron mobility transistor",

abstract = "The temperature-dependent characteristics of an AlGaAsInGaAsGaAs pseudomorphic high electron mobility transistor (PHEMT) with an electroless plated (EP) deposition approach are studied and demonstrated. Based on the low temperature and low energy deposition, the EP deposition approach can form a better metal-semiconductor interface with the reduction in surface damage. Experimentally, the EP-based device shows a significantly improved dc performance. Good experimental results, including a high Schottky barrier height of 0.831 (0.759) eV, low ideality factor of 1.10 (1.32), high turn-on voltage of 0.75 (0.51) V, low reverse leakage current of 3.9 (161.4) μAmm, improved threshold voltage of -0.43 (-0.61) V, and high maximum transconductance of 225.8 (160.9) mSmm, are obtained at 300 (500) K. Moreover, the EP approach also has the advantages of easy operation and low cost.",

author = "Chen, {Li Yang} and Chen, {Huey Ing} and Cheng, {Shiou Ying} and Chen, {Tzu Pin} and Tsai, {Tsung Han} and Liu, {Yi Jung} and Huang, {Yi Wen} and Huang, {Chien Chang} and Liu, {Wen Chau}",

year = "2009",

doi = "10.1149/1.3110033",

language = "English",

volume = "12",

pages = "H211--H213",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "6",

}

TY - JOUR

T1 - Temperature-dependent characteristics of a low temperature deposition approach on a pseudomorphic high electron mobility transistor

AU - Chen, Li Yang

AU - Chen, Huey Ing

AU - Cheng, Shiou Ying

AU - Chen, Tzu Pin

AU - Tsai, Tsung Han

AU - Liu, Yi Jung

AU - Huang, Yi Wen

AU - Huang, Chien Chang

AU - Liu, Wen Chau

PY - 2009

Y1 - 2009

N2 - The temperature-dependent characteristics of an AlGaAsInGaAsGaAs pseudomorphic high electron mobility transistor (PHEMT) with an electroless plated (EP) deposition approach are studied and demonstrated. Based on the low temperature and low energy deposition, the EP deposition approach can form a better metal-semiconductor interface with the reduction in surface damage. Experimentally, the EP-based device shows a significantly improved dc performance. Good experimental results, including a high Schottky barrier height of 0.831 (0.759) eV, low ideality factor of 1.10 (1.32), high turn-on voltage of 0.75 (0.51) V, low reverse leakage current of 3.9 (161.4) μAmm, improved threshold voltage of -0.43 (-0.61) V, and high maximum transconductance of 225.8 (160.9) mSmm, are obtained at 300 (500) K. Moreover, the EP approach also has the advantages of easy operation and low cost.

AB - The temperature-dependent characteristics of an AlGaAsInGaAsGaAs pseudomorphic high electron mobility transistor (PHEMT) with an electroless plated (EP) deposition approach are studied and demonstrated. Based on the low temperature and low energy deposition, the EP deposition approach can form a better metal-semiconductor interface with the reduction in surface damage. Experimentally, the EP-based device shows a significantly improved dc performance. Good experimental results, including a high Schottky barrier height of 0.831 (0.759) eV, low ideality factor of 1.10 (1.32), high turn-on voltage of 0.75 (0.51) V, low reverse leakage current of 3.9 (161.4) μAmm, improved threshold voltage of -0.43 (-0.61) V, and high maximum transconductance of 225.8 (160.9) mSmm, are obtained at 300 (500) K. Moreover, the EP approach also has the advantages of easy operation and low cost.

UR - http://www.scopus.com/inward/record.url?scp=64549115434&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64549115434&partnerID=8YFLogxK

U2 - 10.1149/1.3110033

DO - 10.1149/1.3110033

M3 - Article

AN - SCOPUS:64549115434

SN - 1099-0062

VL - 12

SP - H211-H213

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

Temperature-dependent characteristics of a low temperature deposition approach on a pseudomorphic high electron mobility transistor

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