Temperature-dependent characteristics of a low temperature deposition approach on a pseudomorphic high electron mobility transistor

Li Yang Chen, Huey-Ing Chen, Shiou Ying Cheng, Tzu Pin Chen, Tsung Han Tsai, Yi Jung Liu, Yi Wen Huang, Chien Chang Huang, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

Abstract

The temperature-dependent characteristics of an AlGaAsInGaAsGaAs pseudomorphic high electron mobility transistor (PHEMT) with an electroless plated (EP) deposition approach are studied and demonstrated. Based on the low temperature and low energy deposition, the EP deposition approach can form a better metal-semiconductor interface with the reduction in surface damage. Experimentally, the EP-based device shows a significantly improved dc performance. Good experimental results, including a high Schottky barrier height of 0.831 (0.759) eV, low ideality factor of 1.10 (1.32), high turn-on voltage of 0.75 (0.51) V, low reverse leakage current of 3.9 (161.4) μAmm, improved threshold voltage of -0.43 (-0.61) V, and high maximum transconductance of 225.8 (160.9) mSmm, are obtained at 300 (500) K. Moreover, the EP approach also has the advantages of easy operation and low cost.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number6
DOIs
Publication statusPublished - 2009 Apr 20

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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