The temperature-dependent characteristics of an interesting InGaPInGaAs double-channel pseudomorphic high electron mobility transistor with graded triple δ -doped sheets are systematically studied and demonstrated. By using the graded triple δ -doped sheets and InGaAs double-channel structure, the studied device exhibits temperature-dependent dc and microwave characteristics well. Experimentally, for a 0.8×100 μ m2 gate device, the high turn-on voltage of 1.06 (0.88) V, low gate leakage current of 76 (411) μAmm at VGD =15 V, high maximum transconductance of 175 (151.5) mSmm with 1.6 (1.33) V broad operating regime (>0.9 gm,max), low output conductance of 0.56 (0.59) mSmm, and high voltage gain of 306 (259) are obtained at 300 (450) K, respectively. Furthermore, good device performance with low-temperature variation coefficients under the operating range from 300 to 450 K is obtained. Moreover, good agreements between the simulated analysis and experimental results are found.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry