Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs

Y. K. Su; C. Y. Chang; T. S. Wu; B. D. Liu

doi:10.1007/BF00619819

Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs

Y. K. Su, C. Y. Chang, T. S. Wu, B. D. Liu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs reach-through avalanche photodiodes (RAPD). The temperature coefficient of avalanche breakdown voltage in a depletion region is studied. The response time of a reach-through APD in these materials is also discussed. Finally a comparison of the characteristics between PIN APD and RAPD is presented. The theoretical data have also been substantiated experimentally by Kaneda et al.

Original language	English
Pages (from-to)	377-384
Number of pages	8
Journal	Optical and Quantum Electronics
Volume	11
Issue number	5
DOIs	https://doi.org/10.1007/BF00619819
Publication status	Published - 1979 Sep

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1007/BF00619819

Fingerprint Dive into the research topics of 'Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs'. Together they form a unique fingerprint.

Cite this

@article{10d4d6de81ca4f07b29ddc18f3452ca6,

title = "Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs",

abstract = "A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs reach-through avalanche photodiodes (RAPD). The temperature coefficient of avalanche breakdown voltage in a depletion region is studied. The response time of a reach-through APD in these materials is also discussed. Finally a comparison of the characteristics between PIN APD and RAPD is presented. The theoretical data have also been substantiated experimentally by Kaneda et al.",

author = "Su, {Y. K.} and Chang, {C. Y.} and Wu, {T. S.} and Liu, {B. D.}",

year = "1979",

month = sep,

doi = "10.1007/BF00619819",

language = "English",

volume = "11",

pages = "377--384",

journal = "Optical and Quantum Electronics",

issn = "0306-8919",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs

AU - Su, Y. K.

AU - Chang, C. Y.

AU - Wu, T. S.

AU - Liu, B. D.

PY - 1979/9

Y1 - 1979/9

N2 - A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs reach-through avalanche photodiodes (RAPD). The temperature coefficient of avalanche breakdown voltage in a depletion region is studied. The response time of a reach-through APD in these materials is also discussed. Finally a comparison of the characteristics between PIN APD and RAPD is presented. The theoretical data have also been substantiated experimentally by Kaneda et al.

AB - A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs reach-through avalanche photodiodes (RAPD). The temperature coefficient of avalanche breakdown voltage in a depletion region is studied. The response time of a reach-through APD in these materials is also discussed. Finally a comparison of the characteristics between PIN APD and RAPD is presented. The theoretical data have also been substantiated experimentally by Kaneda et al.

UR - http://www.scopus.com/inward/record.url?scp=0018519802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018519802&partnerID=8YFLogxK

U2 - 10.1007/BF00619819

DO - 10.1007/BF00619819

M3 - Article

AN - SCOPUS:0018519802

VL - 11

SP - 377

EP - 384

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

SN - 0306-8919

IS - 5

ER -