Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs

Y. K. Su, C. Y. Chang, T. S. Wu, B. D. Liu

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Abstract

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs reach-through avalanche photodiodes (RAPD). The temperature coefficient of avalanche breakdown voltage in a depletion region is studied. The response time of a reach-through APD in these materials is also discussed. Finally a comparison of the characteristics between PIN APD and RAPD is presented. The theoretical data have also been substantiated experimentally by Kaneda et al.

Original languageEnglish
Pages (from-to)377-384
Number of pages8
JournalOptical and Quantum Electronics
Volume11
Issue number5
DOIs
Publication statusPublished - 1979 Sep 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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