Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs

Y. K. Su; C. Y. Chang; T. S. Wu; B. D. Liu

doi:10.1007/BF00619819

Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs

Y. K. Su, C. Y. Chang, T. S. Wu, B. D. Liu

Department of Electrical Engineering

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs reach-through avalanche photodiodes (RAPD). The temperature coefficient of avalanche breakdown voltage in a depletion region is studied. The response time of a reach-through APD in these materials is also discussed. Finally a comparison of the characteristics between PIN APD and RAPD is presented. The theoretical data have also been substantiated experimentally by Kaneda et al.

Original language	English
Pages (from-to)	377-384
Number of pages	8
Journal	Optical and Quantum Electronics
Volume	11
Issue number	5
DOIs	https://doi.org/10.1007/BF00619819
Publication status	Published - 1979 Sep 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

Su, Y. K., Chang, C. Y., Wu, T. S., & Liu, B. D. (1979). Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs. Optical and Quantum Electronics, 11(5), 377-384. https://doi.org/10.1007/BF00619819

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10.1007/BF00619819