Temperature-dependent characteristics of an Al0.2Ga0.8As/In0.22Ga0.78As pseudomorphic double heterojunction modulation doped field-effect transistor with a GaAs/AlGaAs superlattice buffer layer

Yih Juan Li, Wei Chou Hsu, Sheng Yung Wang

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The fabrication of Al0.2Ga0.8As/In0.22Ga0.78As pseudomorphic double heterojunction modulation doped field-effect transistor (DH-MODFET) with a superlattice GaAs/Al0.2Ga0.8As buffer layer was discussed. The studied devices revealed low output conductance and high voltage gain due to the reduction of substrate leakage current. It was found that the use of a superlattice buffer layer improved the degradation of the device performance at elevated temperature.

Original languageEnglish
Pages (from-to)760-762
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number2
Publication statusPublished - 2003 Mar 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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