The fabrication of Al0.2Ga0.8As/In0.22Ga0.78As pseudomorphic double heterojunction modulation doped field-effect transistor (DH-MODFET) with a superlattice GaAs/Al0.2Ga0.8As buffer layer was discussed. The studied devices revealed low output conductance and high voltage gain due to the reduction of substrate leakage current. It was found that the use of a superlattice buffer layer improved the degradation of the device performance at elevated temperature.
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2003 Mar 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering