Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor

Tzu Pin Chen; Ssu I. Fu; Jung Hui Tsai; Wen Shiung Lour; Der Feng Guo; Shiou Ying Cheng; Wen-Chau Liu

doi:10.1088/0268-1242/21/12/040

Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor

Tzu Pin Chen, Ssu I. Fu, Jung Hui Tsai, Wen Shiung Lour, Der Feng Guo, Shiou Ying Cheng, Wen-Chau Liu

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The temperature-dependent dc characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter ledge passivation are demonstrated. Experimentally, due to the emitter ledge passivation, higher current gains and wider collector current over the measured temperature range (300-400 K) are observed as compared to a conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on dc current gains, lower base surface recombination current densities and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.

Original language	English
Article number	040
Pages (from-to)	1733-1737
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	21
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/21/12/040
Publication status	Published - 2006 Dec 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/21/12/040

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title = "Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor",

abstract = "The temperature-dependent dc characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter ledge passivation are demonstrated. Experimentally, due to the emitter ledge passivation, higher current gains and wider collector current over the measured temperature range (300-400 K) are observed as compared to a conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on dc current gains, lower base surface recombination current densities and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.",

author = "Chen, {Tzu Pin} and Fu, {Ssu I.} and Tsai, {Jung Hui} and Lour, {Wen Shiung} and Guo, {Der Feng} and Cheng, {Shiou Ying} and Wen-Chau Liu",

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T1 - Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor

AU - Chen, Tzu Pin

AU - Fu, Ssu I.

AU - Tsai, Jung Hui

AU - Lour, Wen Shiung

AU - Guo, Der Feng

AU - Cheng, Shiou Ying

AU - Liu, Wen-Chau

PY - 2006/12/1

Y1 - 2006/12/1

N2 - The temperature-dependent dc characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter ledge passivation are demonstrated. Experimentally, due to the emitter ledge passivation, higher current gains and wider collector current over the measured temperature range (300-400 K) are observed as compared to a conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on dc current gains, lower base surface recombination current densities and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.

AB - The temperature-dependent dc characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter ledge passivation are demonstrated. Experimentally, due to the emitter ledge passivation, higher current gains and wider collector current over the measured temperature range (300-400 K) are observed as compared to a conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on dc current gains, lower base surface recombination current densities and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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ER -

Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor

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