Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor

Tzu Pin Chen, Ssu I. Fu, Jung Hui Tsai, Wen Shiung Lour, Der Feng Guo, Shiou Ying Cheng, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The temperature-dependent dc characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter ledge passivation are demonstrated. Experimentally, due to the emitter ledge passivation, higher current gains and wider collector current over the measured temperature range (300-400 K) are observed as compared to a conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on dc current gains, lower base surface recombination current densities and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.

Original languageEnglish
Article number040
Pages (from-to)1733-1737
Number of pages5
JournalSemiconductor Science and Technology
Issue number12
Publication statusPublished - 2006 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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