The temperature-dependent dc characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter ledge passivation are demonstrated. Experimentally, due to the emitter ledge passivation, higher current gains and wider collector current over the measured temperature range (300-400 K) are observed as compared to a conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on dc current gains, lower base surface recombination current densities and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry