Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Tzu Pin Chen; Wei Hsin Chen; Chi Jhung Lee; Kuei Yi Chu; Li Yang Chen; Ching Wen Hung; Tsung Han Tsai; Shiou Ying Cheng; Wen Chau Liu

doi:10.1063/1.2936964

Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Tzu Pin Chen, Wei Hsin Chen, Chi Jhung Lee, Kuei Yi Chu, Li Yang Chen, Ching Wen Hung, Tsung Han Tsai, Shiou Ying Cheng, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations. Due to the insertion of a step-graded InAlGaAs collector structure at the base-collector heterojunction, the usually observed switching and hysteresis phenomena in InP/InGaAs-based HBTs are not seen in the studied device. The temperature-dependent electron impact ionization characteristics are also investigated. Above all, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.

Original language	English
Article number	114506
Journal	Journal of Applied Physics
Volume	103
Issue number	11
DOIs	https://doi.org/10.1063/1.2936964
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.2936964

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@article{e2ace6a369b34af7ad5555da241f3a70,

title = "Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector",

abstract = "The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations. Due to the insertion of a step-graded InAlGaAs collector structure at the base-collector heterojunction, the usually observed switching and hysteresis phenomena in InP/InGaAs-based HBTs are not seen in the studied device. The temperature-dependent electron impact ionization characteristics are also investigated. Above all, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.",

author = "Chen, {Tzu Pin} and Chen, {Wei Hsin} and Lee, {Chi Jhung} and Chu, {Kuei Yi} and Chen, {Li Yang} and Hung, {Ching Wen} and Tsai, {Tsung Han} and Cheng, {Shiou Ying} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of Taiwan, Republic of China, under Contract No. NSC 95-2221-E006-434-MY2.",

year = "2008",

doi = "10.1063/1.2936964",

language = "English",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

AU - Chen, Tzu Pin

AU - Chen, Wei Hsin

AU - Lee, Chi Jhung

AU - Chu, Kuei Yi

AU - Chen, Li Yang

AU - Hung, Ching Wen

AU - Tsai, Tsung Han

AU - Cheng, Shiou Ying

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of Taiwan, Republic of China, under Contract No. NSC 95-2221-E006-434-MY2.

PY - 2008

Y1 - 2008

N2 - The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations. Due to the insertion of a step-graded InAlGaAs collector structure at the base-collector heterojunction, the usually observed switching and hysteresis phenomena in InP/InGaAs-based HBTs are not seen in the studied device. The temperature-dependent electron impact ionization characteristics are also investigated. Above all, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.

AB - The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations. Due to the insertion of a step-graded InAlGaAs collector structure at the base-collector heterojunction, the usually observed switching and hysteresis phenomena in InP/InGaAs-based HBTs are not seen in the studied device. The temperature-dependent electron impact ionization characteristics are also investigated. Above all, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.

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U2 - 10.1063/1.2936964

DO - 10.1063/1.2936964

M3 - Article

AN - SCOPUS:45149119150

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 114506

ER -

Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

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