Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Tzu Pin Chen, Wei Hsin Chen, Chi Jhung Lee, Kuei Yi Chu, Li Yang Chen, Ching Wen Hung, Tsung Han Tsai, Shiou Ying Cheng, Wen Chau Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations. Due to the insertion of a step-graded InAlGaAs collector structure at the base-collector heterojunction, the usually observed switching and hysteresis phenomena in InP/InGaAs-based HBTs are not seen in the studied device. The temperature-dependent electron impact ionization characteristics are also investigated. Above all, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.

Original languageEnglish
Article number114506
JournalJournal of Applied Physics
Volume103
Issue number11
DOIs
Publication statusPublished - 2008 Jun 20

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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