Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Tzu Pin Chen; Wei Hsin Chen; Chi Jhung Lee; Kuei Yi Chu; Li Yang Chen; Ching Wen Hung; Tsung Han Tsai; Shiou Ying Cheng; Wen Chau Liu

doi:10.1063/1.2936964

Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Tzu Pin Chen
, Wei Hsin Chen
, Chi Jhung Lee
, Kuei Yi Chu
, Li Yang Chen
, Ching Wen Hung
, Tsung Han Tsai
, Shiou Ying Cheng
, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations. Due to the insertion of a step-graded InAlGaAs collector structure at the base-collector heterojunction, the usually observed switching and hysteresis phenomena in InP/InGaAs-based HBTs are not seen in the studied device. The temperature-dependent electron impact ionization characteristics are also investigated. Above all, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.

Original language	English
Article number	114506
Journal	Journal of Applied Physics
Volume	103
Issue number	11
DOIs	https://doi.org/10.1063/1.2936964
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.2936964

Cite this

@article{e2ace6a369b34af7ad5555da241f3a70,

title = "Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector",

abstract = "The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations. Due to the insertion of a step-graded InAlGaAs collector structure at the base-collector heterojunction, the usually observed switching and hysteresis phenomena in InP/InGaAs-based HBTs are not seen in the studied device. The temperature-dependent electron impact ionization characteristics are also investigated. Above all, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.",

author = "Chen, \{Tzu Pin\} and Chen, \{Wei Hsin\} and Lee, \{Chi Jhung\} and Chu, \{Kuei Yi\} and Chen, \{Li Yang\} and Hung, \{Ching Wen\} and Tsai, \{Tsung Han\} and Cheng, \{Shiou Ying\} and Liu, \{Wen Chau\}",

note = "Funding Information: Part of this work was supported by the National Science Council of Taiwan, Republic of China, under Contract No. NSC 95-2221-E006-434-MY2.",

year = "2008",

doi = "10.1063/1.2936964",

language = "English",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

AU - Chen, Tzu Pin

AU - Chen, Wei Hsin

AU - Lee, Chi Jhung

AU - Chu, Kuei Yi

AU - Chen, Li Yang

AU - Hung, Ching Wen

AU - Tsai, Tsung Han

AU - Cheng, Shiou Ying

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of Taiwan, Republic of China, under Contract No. NSC 95-2221-E006-434-MY2.

PY - 2008

Y1 - 2008

N2 - The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations. Due to the insertion of a step-graded InAlGaAs collector structure at the base-collector heterojunction, the usually observed switching and hysteresis phenomena in InP/InGaAs-based HBTs are not seen in the studied device. The temperature-dependent electron impact ionization characteristics are also investigated. Above all, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.

AB - The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations. Due to the insertion of a step-graded InAlGaAs collector structure at the base-collector heterojunction, the usually observed switching and hysteresis phenomena in InP/InGaAs-based HBTs are not seen in the studied device. The temperature-dependent electron impact ionization characteristics are also investigated. Above all, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.

UR - https://www.scopus.com/pages/publications/45149119150

UR - https://www.scopus.com/pages/publications/45149119150#tab=citedBy

U2 - 10.1063/1.2936964

DO - 10.1063/1.2936964

M3 - Article

AN - SCOPUS:45149119150

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 114506

ER -

Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Abstract

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