Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications

Chii Maw Uang; Hung Ming Chuang; Sheng Fu Tsai; Kong Beng Thei; Po Hsien Lai; Ssu I. Fu; Wen Chau Liu

Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications

Chii Maw Uang, Hung Ming Chuang, Sheng Fu Tsai, Kong Beng Thei, Po Hsien Lai, Ssu I. Fu, Wen Chau Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18μm CMOS technology, cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (R_bulk) and interface resistance (R_interface) are obtained at different temperature. For diffused resistors, the R_bulk and R_interface values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the R_interface values are decreased with the increase of temperature. In addition, negative and positive TCR values of R_bulk are found in n⁺ and p⁺ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.

Original language	English
Title of host publication	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Editors	X.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	293-296
Number of pages	4
Volume	4
ISBN (Print)	7309039157
Publication status	Published - 2004
Event	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China Duration: 2004 Mar 15 → 2004 Mar 16

Other

Other	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Country/Territory	China
City	Shanghai
Period	04-03-15 → 04-03-16

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Uang, C. M., Chuang, H. M., Tsai, S. F., Thei, K. B., Lai, P. H., Fu, S. I., & Liu, W. C. (2004). Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications. In X. P. Qu, G. P. Ru, B. Z. Li, B. Mizuno, & H. Iwai (Eds.), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 (Vol. 4, pp. 293-296). Institute of Electrical and Electronics Engineers Inc..

Uang, Chii Maw ; Chuang, Hung Ming ; Tsai, Sheng Fu ; Thei, Kong Beng ; Lai, Po Hsien ; Fu, Ssu I. ; Liu, Wen Chau. / Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications. Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. editor / X.P. Qu ; G.P. Ru ; B.Z. Li ; B. Mizuno ; H. Iwai. Vol. 4 Institute of Electrical and Electronics Engineers Inc., 2004. pp. 293-296

@inproceedings{c2964c326de24773a38cc39c4db81d98,

title = "Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications",

abstract = "The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18μm CMOS technology, cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (Rbulk) and interface resistance (Rinterface) are obtained at different temperature. For diffused resistors, the Rbulk and Rinterface values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the Rinterface values are decreased with the increase of temperature. In addition, negative and positive TCR values of Rbulk are found in n+ and p+ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.",

author = "Uang, {Chii Maw} and Chuang, {Hung Ming} and Tsai, {Sheng Fu} and Thei, {Kong Beng} and Lai, {Po Hsien} and Fu, {Ssu I.} and Liu, {Wen Chau}",

year = "2004",

language = "English",

isbn = "7309039157",

volume = "4",

pages = "293--296",

editor = "X.P. Qu and G.P. Ru and B.Z. Li and B. Mizuno and H. Iwai",

booktitle = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 ; Conference date: 15-03-2004 Through 16-03-2004",

}

Uang, CM, Chuang, HM, Tsai, SF, Thei, KB, Lai, PH, Fu, SI & Liu, WC 2004, Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications. in XP Qu, GP Ru, BZ Li, B Mizuno & H Iwai (eds), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. vol. 4, Institute of Electrical and Electronics Engineers Inc., pp. 293-296, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004, Shanghai, China, 04-03-15.

Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications. / Uang, Chii Maw; Chuang, Hung Ming; Tsai, Sheng Fu; Thei, Kong Beng; Lai, Po Hsien; Fu, Ssu I.; Liu, Wen Chau.

Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. ed. / X.P. Qu; G.P. Ru; B.Z. Li; B. Mizuno; H. Iwai. Vol. 4 Institute of Electrical and Electronics Engineers Inc., 2004. p. 293-296.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications

AU - Uang, Chii Maw

AU - Chuang, Hung Ming

AU - Tsai, Sheng Fu

AU - Thei, Kong Beng

AU - Lai, Po Hsien

AU - Fu, Ssu I.

AU - Liu, Wen Chau

PY - 2004

Y1 - 2004

N2 - The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18μm CMOS technology, cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (Rbulk) and interface resistance (Rinterface) are obtained at different temperature. For diffused resistors, the Rbulk and Rinterface values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the Rinterface values are decreased with the increase of temperature. In addition, negative and positive TCR values of Rbulk are found in n+ and p+ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.

AB - The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18μm CMOS technology, cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (Rbulk) and interface resistance (Rinterface) are obtained at different temperature. For diffused resistors, the Rbulk and Rinterface values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the Rinterface values are decreased with the increase of temperature. In addition, negative and positive TCR values of Rbulk are found in n+ and p+ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.

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M3 - Conference contribution

AN - SCOPUS:3543137248

SN - 7309039157

VL - 4

SP - 293

EP - 296

BT - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

A2 - Qu, X.P.

A2 - Ru, G.P.

A2 - Li, B.Z.

A2 - Mizuno, B.

A2 - Iwai, H.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Y2 - 15 March 2004 through 16 March 2004

ER -

Uang CM, Chuang HM, Tsai SF, Thei KB, Lai PH, Fu SI et al. Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications. In Qu XP, Ru GP, Li BZ, Mizuno B, Iwai H, editors, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. Vol. 4. Institute of Electrical and Electronics Engineers Inc. 2004. p. 293-296

Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications

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All Science Journal Classification (ASJC) codes

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