Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations

Jun Chin Huang, Wei Chou Hsu, Ching Sung Lee, Dong Hai Huang, Ming Feng Huang

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The enhancement-mode (E-mode) and depletion-mode (D-mode) device operations on the same chip and their monolithic integration to form a DCFL inverter by using the double δ-doped AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors have been successfully fabricated and investigated. Distinguished static and microwave-frequency characteristics of the E-mode and D-mode pHEMTs at high ambient temperatures and the temperature-dependent performances of the monolithic DCFL gate integration have been comprehensively studied. Experimentally, the studied device demonstrates superiorly stable thermal threshold coefficient (∂Vth/∂T) of 1 (-1.27) mV/mm-K for the D-mode (E-mode) device. The noise margins of the DCFL inverter, at VDD = 1 V, are superiorly maintained above 0.1 V as the ambient temperature increases up to 400 K. The present devices are promisingly suitable for the low-power-dissipation, high-temperature digital circuit or the mixed-mode circuit applications.

Original languageEnglish
Pages (from-to)882-887
Number of pages6
JournalSolid-State Electronics
Volume51
Issue number6
DOIs
Publication statusPublished - 2007 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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