Abstract
The enhancement-mode (E-mode) and depletion-mode (D-mode) device operations on the same chip and their monolithic integration to form a DCFL inverter by using the double δ-doped AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors have been successfully fabricated and investigated. Distinguished static and microwave-frequency characteristics of the E-mode and D-mode pHEMTs at high ambient temperatures and the temperature-dependent performances of the monolithic DCFL gate integration have been comprehensively studied. Experimentally, the studied device demonstrates superiorly stable thermal threshold coefficient (∂Vth/∂T) of 1 (-1.27) mV/mm-K for the D-mode (E-mode) device. The noise margins of the DCFL inverter, at VDD = 1 V, are superiorly maintained above 0.1 V as the ambient temperature increases up to 400 K. The present devices are promisingly suitable for the low-power-dissipation, high-temperature digital circuit or the mixed-mode circuit applications.
Original language | English |
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Pages (from-to) | 882-887 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 51 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2007 Jun |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry