Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations

Jun Chin Huang; Wei Chou Hsu; Ching Sung Lee; Dong Hai Huang; Ming Feng Huang

doi:10.1016/j.sse.2007.04.015

Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations

Jun Chin Huang, Wei Chou Hsu, Ching Sung Lee, Dong Hai Huang, Ming Feng Huang

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The enhancement-mode (E-mode) and depletion-mode (D-mode) device operations on the same chip and their monolithic integration to form a DCFL inverter by using the double δ-doped AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors have been successfully fabricated and investigated. Distinguished static and microwave-frequency characteristics of the E-mode and D-mode pHEMTs at high ambient temperatures and the temperature-dependent performances of the monolithic DCFL gate integration have been comprehensively studied. Experimentally, the studied device demonstrates superiorly stable thermal threshold coefficient (∂V_th/∂T) of 1 (-1.27) mV/mm-K for the D-mode (E-mode) device. The noise margins of the DCFL inverter, at V_DD = 1 V, are superiorly maintained above 0.1 V as the ambient temperature increases up to 400 K. The present devices are promisingly suitable for the low-power-dissipation, high-temperature digital circuit or the mixed-mode circuit applications.

Original language	English
Pages (from-to)	882-887
Number of pages	6
Journal	Solid-State Electronics
Volume	51
Issue number	6
DOIs	https://doi.org/10.1016/j.sse.2007.04.015
Publication status	Published - 2007 Jun 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2007.04.015

Fingerprint Dive into the research topics of 'Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations'. Together they form a unique fingerprint.

Cite this

@article{338ff59c38bd448f971b9a9b3523a044,

title = "Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations",

abstract = "The enhancement-mode (E-mode) and depletion-mode (D-mode) device operations on the same chip and their monolithic integration to form a DCFL inverter by using the double δ-doped AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors have been successfully fabricated and investigated. Distinguished static and microwave-frequency characteristics of the E-mode and D-mode pHEMTs at high ambient temperatures and the temperature-dependent performances of the monolithic DCFL gate integration have been comprehensively studied. Experimentally, the studied device demonstrates superiorly stable thermal threshold coefficient (∂Vth/∂T) of 1 (-1.27) mV/mm-K for the D-mode (E-mode) device. The noise margins of the DCFL inverter, at VDD = 1 V, are superiorly maintained above 0.1 V as the ambient temperature increases up to 400 K. The present devices are promisingly suitable for the low-power-dissipation, high-temperature digital circuit or the mixed-mode circuit applications.",

author = "Huang, {Jun Chin} and Hsu, {Wei Chou} and Lee, {Ching Sung} and Huang, {Dong Hai} and Huang, {Ming Feng}",

year = "2007",

month = jun,

day = "1",

doi = "10.1016/j.sse.2007.04.015",

language = "English",

volume = "51",

pages = "882--887",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "6",

}

TY - JOUR

T1 - Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations

AU - Huang, Jun Chin

AU - Hsu, Wei Chou

AU - Lee, Ching Sung

AU - Huang, Dong Hai

AU - Huang, Ming Feng

PY - 2007/6/1

Y1 - 2007/6/1

N2 - The enhancement-mode (E-mode) and depletion-mode (D-mode) device operations on the same chip and their monolithic integration to form a DCFL inverter by using the double δ-doped AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors have been successfully fabricated and investigated. Distinguished static and microwave-frequency characteristics of the E-mode and D-mode pHEMTs at high ambient temperatures and the temperature-dependent performances of the monolithic DCFL gate integration have been comprehensively studied. Experimentally, the studied device demonstrates superiorly stable thermal threshold coefficient (∂Vth/∂T) of 1 (-1.27) mV/mm-K for the D-mode (E-mode) device. The noise margins of the DCFL inverter, at VDD = 1 V, are superiorly maintained above 0.1 V as the ambient temperature increases up to 400 K. The present devices are promisingly suitable for the low-power-dissipation, high-temperature digital circuit or the mixed-mode circuit applications.

AB - The enhancement-mode (E-mode) and depletion-mode (D-mode) device operations on the same chip and their monolithic integration to form a DCFL inverter by using the double δ-doped AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors have been successfully fabricated and investigated. Distinguished static and microwave-frequency characteristics of the E-mode and D-mode pHEMTs at high ambient temperatures and the temperature-dependent performances of the monolithic DCFL gate integration have been comprehensively studied. Experimentally, the studied device demonstrates superiorly stable thermal threshold coefficient (∂Vth/∂T) of 1 (-1.27) mV/mm-K for the D-mode (E-mode) device. The noise margins of the DCFL inverter, at VDD = 1 V, are superiorly maintained above 0.1 V as the ambient temperature increases up to 400 K. The present devices are promisingly suitable for the low-power-dissipation, high-temperature digital circuit or the mixed-mode circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=34250729674&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250729674&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2007.04.015

DO - 10.1016/j.sse.2007.04.015

M3 - Article

AN - SCOPUS:34250729674

VL - 51

SP - 882

EP - 887

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 6

ER -