Temperature-dependent characteristics of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistor

Hsi Jen Pan, Chih Hung Yen, Kuo Hui Yu, Kun Wei Lin, Kuan Po Lin, Wen Huei Chiou, Hung Ming Chuang, Wen Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Temperature-dependent dc performances of InP/InGaAlAs heterojunction bipolar transistors (HBT's) using the InGaAlAs quaternary alloy as the base and collector layers are studied and reported. When compared with conventional InP/InGaAs HBT's, the device studied exhibits a higher common-emitter breakdown voltage and a lower output conductance even at high temperature. In addition, with decreasing temperature from 25 toward-1960, an irregular temperature behavior of current gain has been investigated.

Original languageEnglish
Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
EditorsLeonard D. Broekman, Brian F. Usher, John D. Riley
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages238-241
Number of pages4
ISBN (Electronic)0780366980
DOIs
Publication statusPublished - 2000
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: 2000 Dec 62000 Dec 8

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume2000-January

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/TerritoryAustralia
CityBundoora
Period00-12-0600-12-08

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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