Temperature-dependent characteristics of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistor

Hsi Jen Pan, Chih Hung Yen, Kuo Hui Yu, Kun Wei Lin, Kuan Po Lin, Wen Huei Chiou, Hung Ming Chuang, Wen Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Temperature-dependent dc performances of InP/InGaAlAs heterojunction bipolar transistors (HBT's) using the InGaAlAs quaternary alloy as the base and collector layers are studied and reported. When compared with conventional InP/InGaAs HBT's, the device studied exhibits a higher common-emitter breakdown voltage and a lower output conductance even at high temperature. In addition, with decreasing temperature from 25 toward-1960, an irregular temperature behavior of current gain has been investigated.

Original languageEnglish
Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
EditorsLeonard D. Broekman, Brian F. Usher, John D. Riley
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780366980
Publication statusPublished - 2000
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: 2000 Dec 62000 Dec 8

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD


OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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