Temperature-dependent characteristics of polysilicon and diffused resistors

Hung Ming Chuang; Kong Beng Thei; Sheng Fu Tsai; Wen-Chau Liu

doi:10.1109/TED.2003.813472

Temperature-dependent characteristics of polysilicon and diffused resistors

Hung Ming Chuang, Kong Beng Thei, Sheng Fu Tsai, Wen-Chau Liu

Research output: Contribution to journal › Article

40 Citations (Scopus)

Abstract

The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18-μm CMOS technology, a cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (R_bulk) and interface resistance (R_interface) are obtained at different temperature. For diffused resistors, the R_bulk and R_interface values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the R_interface values are decreased with the increase of temperature. In addition, negative and positive TCR values of R_bulk are found in n⁺ and p⁺ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.

Original language	English
Pages (from-to)	1413-1415
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	5
DOIs	https://doi.org/10.1109/TED.2003.813472
Publication status	Published - 2003 May 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Chuang, H. M., Thei, K. B., Tsai, S. F., & Liu, W-C. (2003). Temperature-dependent characteristics of polysilicon and diffused resistors. IEEE Transactions on Electron Devices, 50(5), 1413-1415. https://doi.org/10.1109/TED.2003.813472

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abstract = "The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18-μm CMOS technology, a cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (Rbulk) and interface resistance (Rinterface) are obtained at different temperature. For diffused resistors, the Rbulk and Rinterface values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the Rinterface values are decreased with the increase of temperature. In addition, negative and positive TCR values of Rbulk are found in n+ and p+ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.",

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