Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/In xGa 1-xAs/GaAs pseudomorphic transistors

Wen Lung Chang, Hsi Jen Pan, Wei Chou Wang, Kong Beng Thei, Shiou Ying Cheng, Wen Shiung Lour, Wen Chau Liu

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The temperature-dependent characteristics of InGaP/In xGa 1-xAs/GaAs pseudomorphic transistors with an inverted delta-doped V-shaped channel have been studied. Due to the presented wide-gap InGaP Schottky layer and the V-shaped channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1×100 μm 2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances g m,max are 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 K (450 K), respectively. Meanwhile, the broad and flat drain current operation regimes for high g m, f T, and f max are obtained.

Original languageEnglish
Pages (from-to)L1385-L1387
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number12 A
Publication statusPublished - 1999 Dec 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/In <sub>x</sub>Ga <sub>1-x</sub>As/GaAs pseudomorphic transistors'. Together they form a unique fingerprint.

  • Cite this