The temperature-dependent characteristics of InGaP/In xGa 1-xAs/GaAs pseudomorphic transistors with an inverted delta-doped V-shaped channel have been studied. Due to the presented wide-gap InGaP Schottky layer and the V-shaped channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1×100 μm 2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances g m,max are 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 K (450 K), respectively. Meanwhile, the broad and flat drain current operation regimes for high g m, f T, and f max are obtained.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||12 A|
|Publication status||Published - 1999 Dec 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)