Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3

Han Yin Liu, Wei-Chou Hsu, Bo Yi Chou, Ching Sung Lee, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al2O3. The temperature-dependent electrical characteristics like IGD-VGD, IDS-VDS, and IDS-VGS are measured from 300 K to 480 K. The MOS-HEMT shows lower IGD and higher IDS and higher gm, max. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al2O3/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al2O3 passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.

Original languageEnglish
Title of host publication2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages575-577
Number of pages3
ISBN (Electronic)9781479944033
DOIs
Publication statusPublished - 2015 Aug 14
Event11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia
Duration: 2015 Jun 92015 Jun 12

Publication series

NameProceedings of the International Conference on Power Electronics and Drive Systems
Volume2015-August

Other

Other11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
CountryAustralia
CitySydney
Period15-06-0915-06-12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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