Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3

Han Yin Liu; Wei-Chou Hsu; Bo Yi Chou; Ching Sung Lee; Wen Ching Sun; Sung Yen Wei; Sheng Min Yu

doi:10.1109/PEDS.2015.7203396

Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al₂O₃

Han Yin Liu, Wei-Chou Hsu, Bo Yi Chou, Ching Sung Lee, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al₂O₃. The temperature-dependent electrical characteristics like I_GD-V_GD, I_DS-V_DS, and I_DS-V_GS are measured from 300 K to 480 K. The MOS-HEMT shows lower I_GD and higher I_DS and higher g_{m, max}. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al₂O₃/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al₂O₃ passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.

Original language	English
Title of host publication	2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	575-577
Number of pages	3
ISBN (Electronic)	9781479944033
DOIs	https://doi.org/10.1109/PEDS.2015.7203396
Publication status	Published - 2015 Aug 14
Event	11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia Duration: 2015 Jun 9 → 2015 Jun 12

Publication series

Name	Proceedings of the International Conference on Power Electronics and Drive Systems
Volume	2015-August

Other

Other	11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
Country/Territory	Australia
City	Sydney
Period	15-06-09 → 15-06-12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/PEDS.2015.7203396

Cite this

Liu, H. Y., Hsu, W.-C., Chou, B. Y., Lee, C. S., Sun, W. C., Wei, S. Y., & Yu, S. M. (2015). Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al₂O₃. In 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015 (pp. 575-577). Article 7203396 (Proceedings of the International Conference on Power Electronics and Drive Systems; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PEDS.2015.7203396

Liu, Han Yin ; Hsu, Wei-Chou ; Chou, Bo Yi et al. / Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al₂O₃. 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 575-577 (Proceedings of the International Conference on Power Electronics and Drive Systems).

@inproceedings{18a2687d0db74bc3bec32c50a8a15873,

title = "Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3",

abstract = "This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al2O3. The temperature-dependent electrical characteristics like IGD-VGD, IDS-VDS, and IDS-VGS are measured from 300 K to 480 K. The MOS-HEMT shows lower IGD and higher IDS and higher gm, max. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al2O3/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al2O3 passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.",

author = "Liu, {Han Yin} and Wei-Chou Hsu and Chou, {Bo Yi} and Lee, {Ching Sung} and Sun, {Wen Ching} and Wei, {Sung Yen} and Yu, {Sheng Min}",

year = "2015",

month = aug,

day = "14",

doi = "10.1109/PEDS.2015.7203396",

language = "English",

series = "Proceedings of the International Conference on Power Electronics and Drive Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "575--577",

booktitle = "2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015",

address = "United States",

note = "11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 ; Conference date: 09-06-2015 Through 12-06-2015",

}

Liu, HY, Hsu, W-C, Chou, BY, Lee, CS, Sun, WC, Wei, SY & Yu, SM 2015, Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al₂O₃. in 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015., 7203396, Proceedings of the International Conference on Power Electronics and Drive Systems, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 575-577, 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015, Sydney, Australia, 15-06-09. https://doi.org/10.1109/PEDS.2015.7203396

Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al₂O₃. / Liu, Han Yin; Hsu, Wei-Chou; Chou, Bo Yi et al.
2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 575-577 7203396 (Proceedings of the International Conference on Power Electronics and Drive Systems; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3

AU - Liu, Han Yin

AU - Hsu, Wei-Chou

AU - Chou, Bo Yi

AU - Lee, Ching Sung

AU - Sun, Wen Ching

AU - Wei, Sung Yen

AU - Yu, Sheng Min

PY - 2015/8/14

Y1 - 2015/8/14

N2 - This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al2O3. The temperature-dependent electrical characteristics like IGD-VGD, IDS-VDS, and IDS-VGS are measured from 300 K to 480 K. The MOS-HEMT shows lower IGD and higher IDS and higher gm, max. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al2O3/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al2O3 passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.

AB - This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al2O3. The temperature-dependent electrical characteristics like IGD-VGD, IDS-VDS, and IDS-VGS are measured from 300 K to 480 K. The MOS-HEMT shows lower IGD and higher IDS and higher gm, max. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al2O3/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al2O3 passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.

UR - http://www.scopus.com/inward/record.url?scp=84952008655&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84952008655&partnerID=8YFLogxK

U2 - 10.1109/PEDS.2015.7203396

DO - 10.1109/PEDS.2015.7203396

M3 - Conference contribution

AN - SCOPUS:84952008655

T3 - Proceedings of the International Conference on Power Electronics and Drive Systems

SP - 575

EP - 577

BT - 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015

Y2 - 9 June 2015 through 12 June 2015

ER -

Liu HY, Hsu WC, Chou BY, Lee CS, Sun WC, Wei SY et al. Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al₂O₃. In 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 575-577. 7203396. (Proceedings of the International Conference on Power Electronics and Drive Systems). doi: 10.1109/PEDS.2015.7203396