Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al0.24Ga0.76As high electron mobility transistor

C. C. Cheng; Y. Y. Tsai; K. W. Lin; H. I. Chen; W. H. Hsu; C. W. Hong; W. C. Liu

doi:10.1049/el:20046833

Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al_0.24Ga_0.76As high electron mobility transistor

C. C. Cheng, Y. Y. Tsai, K. W. Lin, H. I. Chen, W. H. Hsu, C. W. Hong, W. C. Liu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

For enhancing hydrogen detecting ability, a high-performance hydrogen sensor based on a high electron mobility transistor structure by utilising a Pd/oxide/Al_0.24Ga_0.76As MOS structure is fabricated and investigated. At different temperatures, hydrogen-sensing characteristics of the studied device under steady- and transition-state with different concentration hydrogen gases are measured. Even at an extremely low hydrogen concentration of 4.3 ppm H₂/air, the current modulation can be found significantly. Furthermore, in comparison with other FET-type hydrogen sensors, under 9970 ppm H₂/air, the studied device exhibits a much shorter response time of 10.95 s.

Original language	English
Pages (from-to)	1608-1609
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	25
DOIs	https://doi.org/10.1049/el:20046833
Publication status	Published - 2004 Dec 9

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20046833

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title = "Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al0.24Ga0.76As high electron mobility transistor",

abstract = "For enhancing hydrogen detecting ability, a high-performance hydrogen sensor based on a high electron mobility transistor structure by utilising a Pd/oxide/Al0.24Ga0.76As MOS structure is fabricated and investigated. At different temperatures, hydrogen-sensing characteristics of the studied device under steady- and transition-state with different concentration hydrogen gases are measured. Even at an extremely low hydrogen concentration of 4.3 ppm H2/air, the current modulation can be found significantly. Furthermore, in comparison with other FET-type hydrogen sensors, under 9970 ppm H2/air, the studied device exhibits a much shorter response time of 10.95 s.",

author = "Cheng, {C. C.} and Tsai, {Y. Y.} and Lin, {K. W.} and Chen, {H. I.} and Hsu, {W. H.} and Hong, {C. W.} and Liu, {W. C.}",

year = "2004",

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doi = "10.1049/el:20046833",

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volume = "40",

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T1 - Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al0.24Ga0.76As high electron mobility transistor

AU - Cheng, C. C.

AU - Tsai, Y. Y.

AU - Lin, K. W.

AU - Chen, H. I.

AU - Hsu, W. H.

AU - Hong, C. W.

AU - Liu, W. C.

PY - 2004/12/9

Y1 - 2004/12/9

N2 - For enhancing hydrogen detecting ability, a high-performance hydrogen sensor based on a high electron mobility transistor structure by utilising a Pd/oxide/Al0.24Ga0.76As MOS structure is fabricated and investigated. At different temperatures, hydrogen-sensing characteristics of the studied device under steady- and transition-state with different concentration hydrogen gases are measured. Even at an extremely low hydrogen concentration of 4.3 ppm H2/air, the current modulation can be found significantly. Furthermore, in comparison with other FET-type hydrogen sensors, under 9970 ppm H2/air, the studied device exhibits a much shorter response time of 10.95 s.

AB - For enhancing hydrogen detecting ability, a high-performance hydrogen sensor based on a high electron mobility transistor structure by utilising a Pd/oxide/Al0.24Ga0.76As MOS structure is fabricated and investigated. At different temperatures, hydrogen-sensing characteristics of the studied device under steady- and transition-state with different concentration hydrogen gases are measured. Even at an extremely low hydrogen concentration of 4.3 ppm H2/air, the current modulation can be found significantly. Furthermore, in comparison with other FET-type hydrogen sensors, under 9970 ppm H2/air, the studied device exhibits a much shorter response time of 10.95 s.

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JF - Electronics Letters

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Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al_0.24Ga_0.76As high electron mobility transistor

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