Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al0.24Ga0.76As high electron mobility transistor

C. C. Cheng, Y. Y. Tsai, K. W. Lin, Huey-Ing Chen, W. H. Hsu, C. W. Hong, Wen-Chau Liu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

For enhancing hydrogen detecting ability, a high-performance hydrogen sensor based on a high electron mobility transistor structure by utilising a Pd/oxide/Al0.24Ga0.76As MOS structure is fabricated and investigated. At different temperatures, hydrogen-sensing characteristics of the studied device under steady- and transition-state with different concentration hydrogen gases are measured. Even at an extremely low hydrogen concentration of 4.3 ppm H2/air, the current modulation can be found significantly. Furthermore, in comparison with other FET-type hydrogen sensors, under 9970 ppm H2/air, the studied device exhibits a much shorter response time of 10.95 s.

Original languageEnglish
Pages (from-to)1608-1609
Number of pages2
JournalElectronics Letters
Volume40
Issue number25
DOIs
Publication statusPublished - 2004 Dec 9

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High electron mobility transistors
Hydrogen
Oxides
Temperature
Sensors
Field effect transistors
Air
Modulation
Gases

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Cheng, C. C. ; Tsai, Y. Y. ; Lin, K. W. ; Chen, Huey-Ing ; Hsu, W. H. ; Hong, C. W. ; Liu, Wen-Chau. / Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al0.24Ga0.76As high electron mobility transistor. In: Electronics Letters. 2004 ; Vol. 40, No. 25. pp. 1608-1609.
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Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al0.24Ga0.76As high electron mobility transistor. / Cheng, C. C.; Tsai, Y. Y.; Lin, K. W.; Chen, Huey-Ing; Hsu, W. H.; Hong, C. W.; Liu, Wen-Chau.

In: Electronics Letters, Vol. 40, No. 25, 09.12.2004, p. 1608-1609.

Research output: Contribution to journalArticle

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AU - Cheng, C. C.

AU - Tsai, Y. Y.

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AU - Chen, Huey-Ing

AU - Hsu, W. H.

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AU - Liu, Wen-Chau

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AB - For enhancing hydrogen detecting ability, a high-performance hydrogen sensor based on a high electron mobility transistor structure by utilising a Pd/oxide/Al0.24Ga0.76As MOS structure is fabricated and investigated. At different temperatures, hydrogen-sensing characteristics of the studied device under steady- and transition-state with different concentration hydrogen gases are measured. Even at an extremely low hydrogen concentration of 4.3 ppm H2/air, the current modulation can be found significantly. Furthermore, in comparison with other FET-type hydrogen sensors, under 9970 ppm H2/air, the studied device exhibits a much shorter response time of 10.95 s.

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