We reported a newly designed double delta-doped GaInP/InGaAs pseudomorphic HEMT with high temperature-dependent performances. In addition to the novel aspects of the proposed HEMT structure, temperature-dependent behaviors including a high-voltage (40 V) and a low-leakage current (17 nA/mm) are further improved by eliminating mesa-sidewall effect. We obtained nearly current-independent transconductance in the temperature of 300-450 K. The measured current gain cutoff frequency fT and maximum oscillation frequency fmax for a 1-μm gate device are 12 and 28.4 GHz, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering