@article{db551209104f4237868aa6884835cb01,
title = "Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT",
abstract = "We reported a newly designed double delta-doped GaInP/InGaAs pseudomorphic HEMT with high temperature-dependent performances. In addition to the novel aspects of the proposed HEMT structure, temperature-dependent behaviors including a high-voltage (40 V) and a low-leakage current (17 nA/mm) are further improved by eliminating mesa-sidewall effect. We obtained nearly current-independent transconductance in the temperature of 300-450 K. The measured current gain cutoff frequency fT and maximum oscillation frequency fmax for a 1-μm gate device are 12 and 28.4 GHz, respectively.",
author = "Liu, {Wen Chau} and Chang, {Wen Lung} and Lour, {Wen Shiung} and Cheng, {Shiou Ying} and Shie, {Yung Hsin} and Chen, {Jing Yuh} and Wang, {Wei Chou} and Pan, {Hsi Jen}",
note = "Funding Information: Manuscript received November 17, 1998; revised February 17, 1999. This work was supported in part by the National Science Council of the R.O.C. under Contract NSC 88-2215-E-006-010. W.-C. Liu, W.-L. Chang, S.-Y. Cheng, Y.-H. Shie, J.-Y. Chen, W.-C. Wang, and H.-J. Pan are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, R.O.C. W.-S. Lour is with the Department of Electrical Engineering, National Taiwan-Ocean University, Keelung, Taiwan, R.O.C. Publisher Item Identifier S 0741-3106(99)05050-8.",
year = "1999",
month = jun,
doi = "10.1109/55.767096",
language = "English",
volume = "20",
pages = "274--276",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}