Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT

Wen Chau Liu, Wen Lung Chang, Wen Shiung Lour, Shiou Ying Cheng, Yung Hsin Shie, Jing Yuh Chen, Wei Chou Wang, Hsi Jen Pan

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22 Citations (Scopus)

Abstract

We reported a newly designed double delta-doped GaInP/InGaAs pseudomorphic HEMT with high temperature-dependent performances. In addition to the novel aspects of the proposed HEMT structure, temperature-dependent behaviors including a high-voltage (40 V) and a low-leakage current (17 nA/mm) are further improved by eliminating mesa-sidewall effect. We obtained nearly current-independent transconductance in the temperature of 300-450 K. The measured current gain cutoff frequency fT and maximum oscillation frequency fmax for a 1-μm gate device are 12 and 28.4 GHz, respectively.

Original languageEnglish
Pages (from-to)274-276
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number6
DOIs
Publication statusPublished - 1999 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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