Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT

Wen Chau Liu, Wen Lung Chang, Wen Shiung Lour, Shiou Ying Cheng, Yung Hsin Shie, Jing Yuh Chen, Wei Chou Wang, Hsi Jen Pan

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